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9T16J-VB Product details
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Product Introduction
**9T16J-VB** is a low voltage single N-channel MOSFET in TO251 package. It has low drain-source voltage and very low on-resistance, suitable for low voltage and high power handling applications. Manufactured using Trench technology, it can provide excellent performance in low voltage switching and power management applications.
**9T16J-VB** is a low voltage single N-channel MOSFET in TO251 package. It has low drain-source voltage and very low on-resistance, suitable for low voltage and high power handling applications. Manufactured using Trench technology, it can provide excellent performance in low voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: 9T16J-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: 9T16J-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**9T16J-VB** is suitable for a variety of fields and modules. Here are some specific application examples:
1. **Electric vehicles**:
In the battery management and motor drive systems of electric vehicles, 9T16J-VB can be used for battery protection, motor control and high-current switching to improve the power output and efficiency of electric vehicles.
2. **Power supply**:
In low-voltage and high-power power supply systems, such as power modules for electronic equipment and communication equipment, this MOSFET can provide stable switching control and high-efficiency power conversion.
3. **Servers and data centers**:
In the power management units of servers and data centers, 9T16J-VB can be used as high-frequency switching power supplies and power inverters to support the operation of high-efficiency data processing and communication equipment.
4. **Industrial Control**:
In industrial automation and robot control systems, this MOSFET can be used for high-frequency switching power supplies, motor control, and power management of various industrial equipment to ensure the stability and reliability of the equipment.
From these examples, it can be seen that the 9T16J-VB has a wide range of application potential in low-voltage and high-power applications, especially in electric vehicles, electronic equipment, industrial control, and data center power management. It is a high-performance low-voltage MOSFET solution.
**9T16J-VB** is suitable for a variety of fields and modules. Here are some specific application examples:
1. **Electric vehicles**:
In the battery management and motor drive systems of electric vehicles, 9T16J-VB can be used for battery protection, motor control and high-current switching to improve the power output and efficiency of electric vehicles.
2. **Power supply**:
In low-voltage and high-power power supply systems, such as power modules for electronic equipment and communication equipment, this MOSFET can provide stable switching control and high-efficiency power conversion.
3. **Servers and data centers**:
In the power management units of servers and data centers, 9T16J-VB can be used as high-frequency switching power supplies and power inverters to support the operation of high-efficiency data processing and communication equipment.
4. **Industrial Control**:
In industrial automation and robot control systems, this MOSFET can be used for high-frequency switching power supplies, motor control, and power management of various industrial equipment to ensure the stability and reliability of the equipment.
From these examples, it can be seen that the 9T16J-VB has a wide range of application potential in low-voltage and high-power applications, especially in electric vehicles, electronic equipment, industrial control, and data center power management. It is a high-performance low-voltage MOSFET solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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