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9R800C-VB TO220F Product details
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Product Introduction Details
**9R800C-VB MOSFET**
9R800C-VB is a high voltage single N-channel MOSFET in TO-220F package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (multi-epitaxial technology), it combines high voltage characteristics with low on-resistance to provide stability and high efficiency for power management and switching circuits.
**9R800C-VB MOSFET**
9R800C-VB is a high voltage single N-channel MOSFET in TO-220F package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (multi-epitaxial technology), it combines high voltage characteristics with low on-resistance to provide stability and high efficiency for power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 11A | 580(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 580mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (multi-epitaxial technology)
- **Package type**: TO-220F
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 580mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (multi-epitaxial technology)
Domain and module applications：
Application fields and module examples
**Power management and conversion**:
9R800C-VB is suitable for use as a power switch device in various power management and conversion modules, especially in applications requiring high voltage and high efficiency, such as electric vehicle charging facilities and industrial power systems.
**Power electronic equipment**:
In power electronic equipment, such as power converters and inverters, 9R800C-VB can provide stable power switch control, support power conversion and energy saving effects, and ensure the stability and reliability of equipment operation.
**Medical equipment**:
In medical equipment that requires high efficiency and stable performance, such as medical X-ray equipment and MRI systems, the high voltage tolerance and low on-resistance characteristics of 9R800C-VB can meet the equipment's strict requirements for power control.
**Industrial automation**:
In the field of industrial automation, such as PLC controllers and robot control units, 9R800C-VB can be used as a power switch device to achieve precise power management and efficient motor drive.
In summary, due to its high voltage tolerance and excellent conduction characteristics, 9R800C-VB MOSFET is suitable for a variety of applications requiring high voltage and high-efficiency power switch control, providing reliable power solutions for modern electronic equipment and industrial systems.
**Power management and conversion**:
9R800C-VB is suitable for use as a power switch device in various power management and conversion modules, especially in applications requiring high voltage and high efficiency, such as electric vehicle charging facilities and industrial power systems.
**Power electronic equipment**:
In power electronic equipment, such as power converters and inverters, 9R800C-VB can provide stable power switch control, support power conversion and energy saving effects, and ensure the stability and reliability of equipment operation.
**Medical equipment**:
In medical equipment that requires high efficiency and stable performance, such as medical X-ray equipment and MRI systems, the high voltage tolerance and low on-resistance characteristics of 9R800C-VB can meet the equipment's strict requirements for power control.
**Industrial automation**:
In the field of industrial automation, such as PLC controllers and robot control units, 9R800C-VB can be used as a power switch device to achieve precise power management and efficient motor drive.
In summary, due to its high voltage tolerance and excellent conduction characteristics, 9R800C-VB MOSFET is suitable for a variety of applications requiring high voltage and high-efficiency power switch control, providing reliable power solutions for modern electronic equipment and industrial systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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