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9R1K2C-VB TO247 Product details
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Product Introduction Details
**9R1K2C-VB MOSFET**
9R1K2C-VB is a high voltage single N-channel MOSFET in TO-247 package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (multi-epitaxial technology), it combines high voltage characteristics with low on-resistance to provide stability and high efficiency for power management and switching circuits.
**9R1K2C-VB MOSFET**
9R1K2C-VB is a high voltage single N-channel MOSFET in TO-247 package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (multi-epitaxial technology), it combines high voltage characteristics with low on-resistance to provide stability and high efficiency for power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO-247
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (Multi-epitaxial technology)
- **Package type**: TO-247
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (Multi-epitaxial technology)
Domain and module applications：
Application fields and module examples
**Industrial high-voltage power supply**:
9R1K2C-VB is suitable for use as a switching element in industrial high-voltage power supply, and can work stably under high voltage and high current environments, such as industrial drives and high-voltage motor control systems.
**Grid inverter**:
In power electronic equipment, especially grid inverter systems, the high voltage tolerance and low on-resistance characteristics of 9R1K2C-VB make it an important component for converting power and providing stable voltage.
**Medical equipment**:
In medical equipment that requires high efficiency and stable performance, such as high-voltage X-ray generators and nuclear magnetic resonance equipment, 9R1K2C-VB can provide reliable power switch control to ensure the stability and safety of equipment operation.
**Electric vehicle charging facilities**:
In electric vehicle charging facilities, especially in situations where high-power charging and fast charging are required, 9R1K2C-VB can withstand high voltage and high current, and provide reliable power switching and current control.
In summary, 9R1K2C-VB MOSFET can play a key role in a variety of high-voltage power management and switch control applications due to its high-voltage tolerance and excellent conduction characteristics, providing reliable power solutions for electronic devices and systems in various fields.
**Industrial high-voltage power supply**:
9R1K2C-VB is suitable for use as a switching element in industrial high-voltage power supply, and can work stably under high voltage and high current environments, such as industrial drives and high-voltage motor control systems.
**Grid inverter**:
In power electronic equipment, especially grid inverter systems, the high voltage tolerance and low on-resistance characteristics of 9R1K2C-VB make it an important component for converting power and providing stable voltage.
**Medical equipment**:
In medical equipment that requires high efficiency and stable performance, such as high-voltage X-ray generators and nuclear magnetic resonance equipment, 9R1K2C-VB can provide reliable power switch control to ensure the stability and safety of equipment operation.
**Electric vehicle charging facilities**:
In electric vehicle charging facilities, especially in situations where high-power charging and fast charging are required, 9R1K2C-VB can withstand high voltage and high current, and provide reliable power switching and current control.
In summary, 9R1K2C-VB MOSFET can play a key role in a variety of high-voltage power management and switch control applications due to its high-voltage tolerance and excellent conduction characteristics, providing reliable power solutions for electronic devices and systems in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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