中文
English
9R1K0C-VB TO220F Product details
Back to previous pageProduct introduction：
Product Introduction
**9R1K0C-VB** is a high voltage single N-channel MOSFET in TO220F package. It has high drain-source voltage and low on-resistance, suitable for applications requiring high voltage and medium power handling. Manufactured with SJ_Multi-EPI technology, it can provide reliable performance in high voltage switching and power management applications.
**9R1K0C-VB** is a high voltage single N-channel MOSFET in TO220F package. It has high drain-source voltage and low on-resistance, suitable for applications requiring high voltage and medium power handling. Manufactured with SJ_Multi-EPI technology, it can provide reliable performance in high voltage switching and power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | 560(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 9R1K0C-VB
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 560mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: 9R1K0C-VB
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 560mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules
**9R1K0C-VB** is suitable for a variety of fields and modules. Here are a few specific application examples:
1. **Power electronics**:
Due to its high drain-source voltage and low on-resistance, the 9R1K0C-VB is very suitable for use in power electronics applications such as power inverters, frequency converters, etc., providing reliable switching and control functions under high voltage environments.
2. **Industrial automation**:
In industrial control and automation equipment, this MOSFET can be used for power management of high-voltage switching power supplies, motor drives, and various industrial equipment to ensure high efficiency and stability of the equipment.
3. **Electric vehicle charging equipment**:
In electric vehicle charging piles and industrial charging equipment, the 9R1K0C-VB can be applied to high-voltage DC charging units to support battery management and power conversion, improve charging efficiency and system reliability.
4. **Power supply**:
In power supply systems that need to handle high voltage and high current, this MOSFET can be used as a switching power supply and voltage regulator to ensure stable power supply and long-term reliable operation of the equipment.
From these examples, it can be seen that the 9R1K0C-VB has a wide range of application potential in high-voltage and medium-power applications, especially in the fields of industrial electronics, power electronics and high-voltage power management. It is an excellent high-voltage MOSFET product.
**9R1K0C-VB** is suitable for a variety of fields and modules. Here are a few specific application examples:
1. **Power electronics**:
Due to its high drain-source voltage and low on-resistance, the 9R1K0C-VB is very suitable for use in power electronics applications such as power inverters, frequency converters, etc., providing reliable switching and control functions under high voltage environments.
2. **Industrial automation**:
In industrial control and automation equipment, this MOSFET can be used for power management of high-voltage switching power supplies, motor drives, and various industrial equipment to ensure high efficiency and stability of the equipment.
3. **Electric vehicle charging equipment**:
In electric vehicle charging piles and industrial charging equipment, the 9R1K0C-VB can be applied to high-voltage DC charging units to support battery management and power conversion, improve charging efficiency and system reliability.
4. **Power supply**:
In power supply systems that need to handle high voltage and high current, this MOSFET can be used as a switching power supply and voltage regulator to ensure stable power supply and long-term reliable operation of the equipment.
From these examples, it can be seen that the 9R1K0C-VB has a wide range of application potential in high-voltage and medium-power applications, especially in the fields of industrial electronics, power electronics and high-voltage power management. It is an excellent high-voltage MOSFET product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
