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9NM40N-VB TO252 Product details
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Product Introduction Details
**9NM40N-VB MOSFET**
9NM40N-VB is a high voltage single N-channel MOSFET in TO-252 package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (Multi-Epi Technology), it combines high voltage characteristics with low on-resistance to provide reliability and efficiency for power management and switching circuits.
**9NM40N-VB MOSFET**
9NM40N-VB is a high voltage single N-channel MOSFET in TO-252 package, suitable for applications requiring high voltage tolerance and medium current handling capability. Using SJ_Multi-EPI (Multi-Epi Technology), it combines high voltage characteristics with low on-resistance to provide reliability and efficiency for power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI (Multi-epitaxial technology)
- **Package type**: TO-252
- **Transistor configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI (Multi-epitaxial technology)
Domain and module applications：
Application fields and module examples
**Electric vehicle charger**:
9NM40N-VB is suitable for use as a switching element in electric vehicle chargers, capable of withstanding the high voltage and current during the charging process of electric vehicles while maintaining good efficiency and stability.
**Power conversion module**:
In various power conversion modules, especially those requiring high voltage conversion and low power loss, 9NM40N-VB can provide reliable power switch control to ensure stable operation and energy saving of the system.
**Industrial control system**:
In industrial automation and control systems, such as PLC controllers and robot control units, 9NM40N-VB can be used as a power switch device to achieve precise power management and high-efficiency motor drive.
**UPS and inverter**:
In uninterruptible power supply (UPS) and inverter systems, the high voltage tolerance and low on-resistance characteristics of 9NM40N-VB make it a key component for power conversion and energy storage, ensuring that the power system can provide stable power output during faults and grid fluctuations.
In summary, due to its high voltage tolerance and excellent conduction characteristics, 9NM40N-VB MOSFET can play an important role in a variety of power management and switch control applications, providing reliable power solutions for modern electronic devices and industrial systems.
**Electric vehicle charger**:
9NM40N-VB is suitable for use as a switching element in electric vehicle chargers, capable of withstanding the high voltage and current during the charging process of electric vehicles while maintaining good efficiency and stability.
**Power conversion module**:
In various power conversion modules, especially those requiring high voltage conversion and low power loss, 9NM40N-VB can provide reliable power switch control to ensure stable operation and energy saving of the system.
**Industrial control system**:
In industrial automation and control systems, such as PLC controllers and robot control units, 9NM40N-VB can be used as a power switch device to achieve precise power management and high-efficiency motor drive.
**UPS and inverter**:
In uninterruptible power supply (UPS) and inverter systems, the high voltage tolerance and low on-resistance characteristics of 9NM40N-VB make it a key component for power conversion and energy storage, ensuring that the power system can provide stable power output during faults and grid fluctuations.
In summary, due to its high voltage tolerance and excellent conduction characteristics, 9NM40N-VB MOSFET can play an important role in a variety of power management and switch control applications, providing reliable power solutions for modern electronic devices and industrial systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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