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9N03-VB Product details
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Product Introduction
9N03-VB is a high-performance single N-channel power MOSFET, using advanced Trench technology, designed for high-power control applications requiring high performance and reliability. This model adopts TO252 package, has excellent conduction characteristics and stability, suitable for a variety of high-power circuit designs.
9N03-VB is a high-performance single N-channel power MOSFET, using advanced Trench technology, designed for high-power control applications requiring high performance and reliability. This model adopts TO252 package, has excellent conduction characteristics and stability, suitable for a variety of high-power circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Product parameters
- **Model**: 9N03-VB
- **Package**: TO252
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: 9N03-VB
- **Package**: TO252
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and modules: 1. **Power management and power inverter**: 9N03-VB can be used in power management and power inverter applications, including battery management systems, electric vehicle chargers, and solar inverters. Its high current handling capability and low on-resistance provide efficient power conversion and stable energy management. 2. **Power tool and appliance control**: In power tool and appliance control systems, this MOSFET can be used for motor drive and power switch control. Its excellent on-characteristics and high current carrying capacity ensure stable operation of the equipment under high power loads. 3. **Electric vehicle power module**: 9N03-VB is suitable for motor drive modules and battery management systems in electric and hybrid vehicles. In these applications, its high current and low on-resistance help improve the energy efficiency and performance of the vehicle while ensuring system reliability.
4. **Industrial Control and Automation**:
In industrial control systems and automation equipment, reliable power switching devices are required to achieve precise power control and efficient electrical operation. 9N03-VB can be used in these applications to support high-power electrical operation and long-term stability.
In summary, 9N03-VB is a versatile, high-performance MOSFET suitable for a variety of applications requiring medium to high power, low loss and high reliability, which can significantly improve the overall performance and efficiency of the system.
4. **Industrial Control and Automation**:
In industrial control systems and automation equipment, reliable power switching devices are required to achieve precise power control and efficient electrical operation. 9N03-VB can be used in these applications to support high-power electrical operation and long-term stability.
In summary, 9N03-VB is a versatile, high-performance MOSFET suitable for a variety of applications requiring medium to high power, low loss and high reliability, which can significantly improve the overall performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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