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9923GEO-VB Product details

Product introduction:

9923GEO-VB Product Introduction Details

9923GEO-VB is a dual P+N channel field effect transistor manufactured using Trench technology. It has a negative 20V drain-source voltage (VDS), suitable for bipolar operation, and has low on-resistance and good performance characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A 18(mΩ) 13(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -20V -1.2V -7.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
9923GEO-VB Detailed parameter description

- **Package:** TSSOP8
- **Configuration:** Dual-P+P-Channel
- **Drain-Source Voltage (VDS):** -20V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -1.2V
- **On-Resistance (RDS(ON)):**
- 18mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Drain Current (ID):** -7.5A
- **Technology:** Trench

Domain and module applications:

Application fields and module examples

9923GEO-VB is suitable for the following fields and module applications:

1. **Power management:** In bipolar power management circuits, such as power management units for laptops and mobile devices.

2. **Power tools:** Used to control the switching and drive circuits of motors in power tools to achieve high efficiency and reliability.

3. **Charging protection:** As a protection switch in chargers and battery charging management systems, ensuring safety and efficiency during the charging process.

4. **Automotive electronics:** In automotive electronic systems, such as motor control and battery management systems for electric vehicles.

The bipolar design of the 9923GEO-VB makes it very useful in circuits that need to handle both positive and negative voltage signals, while its low on-resistance and high current carrying capacity ensure excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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