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98E580-VB Product details
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1. Product Introduction
98E580-VB is a single N-channel power MOSFET in SOT669 package. The device has a drain-source voltage (VDS) of 80V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.4V. 98E580-VB uses advanced trench technology and has a low on-resistance (RDS(ON)), which is 7.2mΩ at VGS=4.5V and 6mΩ at VGS=10V. The maximum continuous drain current (ID) is 90A, suitable for high-power load switching and power management applications.
98E580-VB is a single N-channel power MOSFET in SOT669 package. The device has a drain-source voltage (VDS) of 80V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.4V. 98E580-VB uses advanced trench technology and has a low on-resistance (RDS(ON)), which is 7.2mΩ at VGS=4.5V and 6mΩ at VGS=10V. The maximum continuous drain current (ID) is 90A, suitable for high-power load switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 7.2(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 7.2mΩ
- When VGS=10V: 6mΩ
- **Maximum continuous drain current (ID)**: 90A
- **Technology type**: Trench technology
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 7.2mΩ
- When VGS=10V: 6mΩ
- **Maximum continuous drain current (ID)**: 90A
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples
98E580-VB MOSFET can be widely used in the following fields and modules:
- **Power management**: Applicable to high-power power switches and power inverters, such as industrial power systems, power tools and electric vehicles.
- **Electric drive**: In applications that require high-efficiency electric drive, such as electric boats, electric locomotives and electric aircraft.
- **Industrial automation**: For power switches and motor control in robots, automation equipment and automatic control systems.
- **Power tools**: Power switches and electric drive circuits in high-performance power tools.
The high current handling capability and low on-resistance of the 98E580-VB MOSFET make it an ideal choice for many power electronics applications that require high efficiency and reliability.
98E580-VB MOSFET can be widely used in the following fields and modules:
- **Power management**: Applicable to high-power power switches and power inverters, such as industrial power systems, power tools and electric vehicles.
- **Electric drive**: In applications that require high-efficiency electric drive, such as electric boats, electric locomotives and electric aircraft.
- **Industrial automation**: For power switches and motor control in robots, automation equipment and automatic control systems.
- **Power tools**: Power switches and electric drive circuits in high-performance power tools.
The high current handling capability and low on-resistance of the 98E580-VB MOSFET make it an ideal choice for many power electronics applications that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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