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963B-VB Product details
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1. Product Introduction Details
VBsemi MOSFET 963B-VB is a dual P+P-channel MOSFET in TSSOP8 package. It has the following main features:
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -1.7V
- **RDS(ON) (drain-source resistance when turned on)**:
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **ID (drain current)**: -5.2A (negative number indicates the drain current direction of P-channel MOSFET)
- **Technology**: Trench technology
VBsemi MOSFET 963B-VB is a dual P+P-channel MOSFET in TSSOP8 package. It has the following main features:
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -1.7V
- **RDS(ON) (drain-source resistance when turned on)**:
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **ID (drain current)**: -5.2A (negative number indicates the drain current direction of P-channel MOSFET)
- **Technology**: Trench technology
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 55(mΩ) | 36(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
2. Parameter description
- **Package**: TSSOP8
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): -30V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): -1.7V
- On-resistance (RDS(ON)):
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): -5.2A
- **Technology**: Trench technology
- **Package**: TSSOP8
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): -30V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): -1.7V
- On-resistance (RDS(ON)):
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): -5.2A
- **Technology**: Trench technology
Domain and module applications：
3. Application Examples
963B-VB MOSFET can play a role in the following fields and modules:
- **Battery protection**: In the battery protection circuit of portable devices and power tools, it is used for over-discharge protection and battery management to ensure safe use and long life of the battery.
- **Power management**: In low-voltage power management systems, it is used for power switching and current control to provide efficient energy conversion and stable voltage output.
- **Mobile phones and tablets**: In mobile devices, it is used for battery charging and power management modules to extend battery life and improve device performance.
- **Portable consumer electronics**: In portable audio devices and smart watches, it is used for battery optimization and power management to achieve longer battery life and higher performance.
The above examples show the application scenarios of 963B-VB MOSFET in battery protection, power management, mobile devices and portable consumer electronics.
963B-VB MOSFET can play a role in the following fields and modules:
- **Battery protection**: In the battery protection circuit of portable devices and power tools, it is used for over-discharge protection and battery management to ensure safe use and long life of the battery.
- **Power management**: In low-voltage power management systems, it is used for power switching and current control to provide efficient energy conversion and stable voltage output.
- **Mobile phones and tablets**: In mobile devices, it is used for battery charging and power management modules to extend battery life and improve device performance.
- **Portable consumer electronics**: In portable audio devices and smart watches, it is used for battery optimization and power management to achieve longer battery life and higher performance.
The above examples show the application scenarios of 963B-VB MOSFET in battery protection, power management, mobile devices and portable consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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