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9563GJ-VB Product details
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1. Product Introduction Details
VBsemi MOSFET 9563GJ-VB is a single P-channel MOSFET in TO251 package. It has the following main features:
- **VDS (drain-source voltage)**: -40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -2V
- **RDS(ON) (drain-source resistance when turned on)**:
- 14mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **ID (drain current)**: -55A (negative number indicates the drain current direction of P-channel MOSFET)
- **Technology**: Trench type
VBsemi MOSFET 9563GJ-VB is a single P-channel MOSFET in TO251 package. It has the following main features:
- **VDS (drain-source voltage)**: -40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -2V
- **RDS(ON) (drain-source resistance when turned on)**:
- 14mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **ID (drain current)**: -55A (negative number indicates the drain current direction of P-channel MOSFET)
- **Technology**: Trench type
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | 14(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Parameter description
- **Package**: TO251
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): -40V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): -2V
- On-resistance (RDS(ON)):
- 14mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): -55A
- **Technology**: Trench technology
- **Package**: TO251
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): -40V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): -2V
- On-resistance (RDS(ON)):
- 14mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): -55A
- **Technology**: Trench technology
Domain and module applications：
3. Application Examples
9563GJ-VB MOSFET is suitable for a variety of fields and modules, such as:
- **Power Management**: In negative voltage DC-DC converters and regulators, it provides efficient negative voltage regulation and current control.
- **Battery Protection**: In negative voltage battery management systems, it is used for battery charge and discharge protection and management.
- **Power Inversion**: In negative voltage power inverters, it is used for power switching and power regulation.
These examples show the potential applications of 9563GJ-VB MOSFET in the fields of negative voltage power management, battery protection and power inverter.
9563GJ-VB MOSFET is suitable for a variety of fields and modules, such as:
- **Power Management**: In negative voltage DC-DC converters and regulators, it provides efficient negative voltage regulation and current control.
- **Battery Protection**: In negative voltage battery management systems, it is used for battery charge and discharge protection and management.
- **Power Inversion**: In negative voltage power inverters, it is used for power switching and power regulation.
These examples show the potential applications of 9563GJ-VB MOSFET in the fields of negative voltage power management, battery protection and power inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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