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9465BGJ-VB Product details
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1. Product Introduction Details
VBsemi MOSFET 9465BGJ-VB is a single N-channel MOSFET in TO251 package. It has the following main features:
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 1.8V
- **RDS(ON) (drain-source resistance when turned on)**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **ID (drain current)**: 55A
- **Technology**: Trench type
VBsemi MOSFET 9465BGJ-VB is a single N-channel MOSFET in TO251 package. It has the following main features:
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 1.8V
- **RDS(ON) (drain-source resistance when turned on)**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **ID (drain current)**: 55A
- **Technology**: Trench type
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 14(mΩ) | 13(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Parameter description
- **Package**: TO251
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): 40V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): 1.8V
- On-resistance (RDS(ON)):
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): 55A
- **Technology**: Trench technology
- **Package**: TO251
- **Voltage parameters**:
- Maximum drain-source voltage (VDS): 40V
- Maximum gate-source voltage (VGS): ±20V
- **Performance parameters**:
- Threshold voltage (Vth): 1.8V
- On-resistance (RDS(ON)):
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Current parameters**:
- Maximum drain current (ID): 55A
- **Technology**: Trench technology
Domain and module applications：
3. Application Examples
The 9465BGJ-VB MOSFET is suitable for a variety of fields and modules, such as:
- **Power Management**: In high-power DC-DC converters and regulators, it provides high-efficiency voltage regulation and current control.
- **Electric Vehicle**: As a driver device for electric vehicles, it is used for motor control and battery management systems.
- **Industrial Automation**: In industrial control systems, it is used for switching power supplies and power distribution.
These examples show the wide application of the 9465BGJ-VB MOSFET in power management, electric vehicles and industrial automation.
The 9465BGJ-VB MOSFET is suitable for a variety of fields and modules, such as:
- **Power Management**: In high-power DC-DC converters and regulators, it provides high-efficiency voltage regulation and current control.
- **Electric Vehicle**: As a driver device for electric vehicles, it is used for motor control and battery management systems.
- **Industrial Automation**: In industrial control systems, it is used for switching power supplies and power distribution.
These examples show the wide application of the 9465BGJ-VB MOSFET in power management, electric vehicles and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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