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91560E-VB Product details
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1. Product Introduction
The 915310E-VB is a single N-channel power MOSFET in a SOT669 package. The device has a drain-source voltage (VDS) of 100V, a maximum gate-source voltage (VGS) of ±20V, and a typical threshold voltage (Vth) of 1.4V. The 915310E-VB uses advanced trench technology and has an extremely low on-resistance (RDS(ON)) of 13.92mΩ at VGS=4.5V and 11.6mΩ at VGS=10V. This enables it to provide high efficiency in high current applications with a maximum continuous drain current (ID) of 69A.
The 915310E-VB is a single N-channel power MOSFET in a SOT669 package. The device has a drain-source voltage (VDS) of 100V, a maximum gate-source voltage (VGS) of ±20V, and a typical threshold voltage (Vth) of 1.4V. The 915310E-VB uses advanced trench technology and has an extremely low on-resistance (RDS(ON)) of 13.92mΩ at VGS=4.5V and 11.6mΩ at VGS=10V. This enables it to provide high efficiency in high current applications with a maximum continuous drain current (ID) of 69A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 13.92mΩ
- When VGS=10V: 11.6mΩ
- **Maximum continuous drain current (ID)**: 69A
- **Technology type**: Trench technology
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 13.92mΩ
- When VGS=10V: 11.6mΩ
- **Maximum continuous drain current (ID)**: 69A
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples
The high current handling capability and low on-resistance of the 915310E-VB make it ideal for efficient power management and power conversion applications. Specifically:
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in motor drive modules in electric vehicles and hybrid electric vehicles to improve motor efficiency and reduce power losses.
- **Solar Inverters**: In solar photovoltaic systems, the 915310E-VB can be used in inverter modules to improve power conversion efficiency and reduce heat loss.
- **Industrial Power**: This MOSFET is suitable for industrial power modules, including uninterruptible power supply (UPS) systems and high-efficiency switching power supplies (SMPS), providing efficient power management and conversion.
- **Server Power**: In data center and server power management, the 915310E-VB can be used in high-efficiency DC-DC converters to improve overall system energy efficiency and reduce heat generation.
The high current handling capability and low on-resistance of the 915310E-VB make it ideal for efficient power management and power conversion applications. Specifically:
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in motor drive modules in electric vehicles and hybrid electric vehicles to improve motor efficiency and reduce power losses.
- **Solar Inverters**: In solar photovoltaic systems, the 915310E-VB can be used in inverter modules to improve power conversion efficiency and reduce heat loss.
- **Industrial Power**: This MOSFET is suitable for industrial power modules, including uninterruptible power supply (UPS) systems and high-efficiency switching power supplies (SMPS), providing efficient power management and conversion.
- **Server Power**: In data center and server power management, the 915310E-VB can be used in high-efficiency DC-DC converters to improve overall system energy efficiency and reduce heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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