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91180E-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi MOSFET 91180E-VB is a high-performance single-channel N-channel field effect transistor manufactured using trench technology. Its design optimizes on-resistance and current handling capability, and is suitable for power and switching applications requiring high efficiency and reliability.
VBsemi MOSFET 91180E-VB is a high-performance single-channel N-channel field effect transistor manufactured using trench technology. Its design optimizes on-resistance and current handling capability, and is suitable for power and switching applications requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 7.2(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Parameter description:
- **Model: ** 91180E-VB
- **Package: ** SOT669
- **Channel type: ** Single N-channel
- **Withstand voltage (VDS): ** 80V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum current (ID): ** 90A
- **Technology: ** Trench technology (Trench)
- **Model: ** 91180E-VB
- **Package: ** SOT669
- **Channel type: ** Single N-channel
- **Withstand voltage (VDS): ** 80V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum current (ID): ** 90A
- **Technology: ** Trench technology (Trench)
Domain and module applications：
3. Application Examples:
The 91180E-VB MOSFET is suitable for the following fields and modules:
- **Power Converters:** In low to medium power DC-DC power converters, the 91180E-VB can provide high efficiency and stable voltage conversion through its low on-resistance and high current handling capability.
- **Power Tools and Electric Vehicles:** Due to its high current capability and relatively high withstand voltage characteristics, the 91180E-VB is used as a switching element in motor drives in power tools and electric vehicles to effectively manage electric power transmission and improve energy utilization.
- **Power Management Modules:** In industrial control and automation systems, the 91180E-VB can be used as a switching device in power management modules to help achieve efficient power management and energy consumption optimization.
These application examples demonstrate the wide applicability and capabilities of the 91180E-VB MOSFET to meet the needs of a variety of applications that require high power density and reliability.
The 91180E-VB MOSFET is suitable for the following fields and modules:
- **Power Converters:** In low to medium power DC-DC power converters, the 91180E-VB can provide high efficiency and stable voltage conversion through its low on-resistance and high current handling capability.
- **Power Tools and Electric Vehicles:** Due to its high current capability and relatively high withstand voltage characteristics, the 91180E-VB is used as a switching element in motor drives in power tools and electric vehicles to effectively manage electric power transmission and improve energy utilization.
- **Power Management Modules:** In industrial control and automation systems, the 91180E-VB can be used as a switching device in power management modules to help achieve efficient power management and energy consumption optimization.
These application examples demonstrate the wide applicability and capabilities of the 91180E-VB MOSFET to meet the needs of a variety of applications that require high power density and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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