中文
English
8N60-VB TO251 Product details
Back to previous pageProduct introduction：
1. 8N60-VB Product Introduction
8N60-VB is a single N-channel MOSFET, using SJ_Multi-EPI technology, packaged in TO251. It has a withstand voltage of 650V and a maximum continuous drain current (ID) of 7A, suitable for use in power management and power conversion applications that require high withstand voltage and stable performance.
8N60-VB is a single N-channel MOSFET, using SJ_Multi-EPI technology, packaged in TO251. It has a withstand voltage of 650V and a maximum continuous drain current (ID) of 7A, suitable for use in power management and power conversion applications that require high withstand voltage and stable performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. 8N60-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. 8N60-VB application fields and module examples
8N60-VB can be used in many fields and modules. Here are some typical examples:
1. **Power supply**:
Due to its high withstand voltage and moderate current handling capability, 8N60-VB can be used as a power switch device in power supply units and switching power supply designs to ensure high efficiency and stable performance.
2. **Electric vehicle charging piles**:
In electric vehicle charging facilities, such as power modules and power electronic control units of charging piles, the high withstand voltage and stable performance of 8N60-VB ensure charging efficiency and safety.
3. **Solar inverter**:
In the inverter of the solar power generation system, 8N60-VB can be used as the power switch of the DC-AC converter to ensure that the DC power generated by the solar panel is effectively converted into AC power, which is supplied to the grid or used in an independent power system.
4. **Industrial Electronics**:
In industrial electronic equipment that requires high voltage resistance and reliable performance, such as industrial motor control, power management and high-voltage power supply units, 8N60-VB can provide stable power switching functions.
8N60-VB TO251 packaged single N-channel MOSFET is suitable for a variety of power management and power conversion applications that require high voltage resistance and moderate current handling capabilities.
8N60-VB can be used in many fields and modules. Here are some typical examples:
1. **Power supply**:
Due to its high withstand voltage and moderate current handling capability, 8N60-VB can be used as a power switch device in power supply units and switching power supply designs to ensure high efficiency and stable performance.
2. **Electric vehicle charging piles**:
In electric vehicle charging facilities, such as power modules and power electronic control units of charging piles, the high withstand voltage and stable performance of 8N60-VB ensure charging efficiency and safety.
3. **Solar inverter**:
In the inverter of the solar power generation system, 8N60-VB can be used as the power switch of the DC-AC converter to ensure that the DC power generated by the solar panel is effectively converted into AC power, which is supplied to the grid or used in an independent power system.
4. **Industrial Electronics**:
In industrial electronic equipment that requires high voltage resistance and reliable performance, such as industrial motor control, power management and high-voltage power supply units, 8N60-VB can provide stable power switching functions.
8N60-VB TO251 packaged single N-channel MOSFET is suitable for a variety of power management and power conversion applications that require high voltage resistance and moderate current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
