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80N04UG-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
VBsemi 80N04UG-VB is a low voltage single N-channel MOSFET in TO263 package. Designed with Trench technology, the device has low on-resistance and high current carrying capacity, suitable for high-performance power management and switching applications.
VBsemi 80N04UG-VB is a low voltage single N-channel MOSFET in TO263 package. Designed with Trench technology, the device has low on-resistance and high current carrying capacity, suitable for high-performance power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
| Parameter| Value|
|----------------------|---------------------|
| Package type| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 40V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 3V |
| On-resistance (RDS(ON)) | 2.5mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 2mΩ @ VGS=10V |
| Continuous drain current (ID) | 150A |
| Technology| Trench |
| Parameter| Value|
|----------------------|---------------------|
| Package type| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 40V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 3V |
| On-resistance (RDS(ON)) | 2.5mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 2mΩ @ VGS=10V |
| Continuous drain current (ID) | 150A |
| Technology| Trench |
Domain and module applications：
III. Application fields and module examples
1. **Electric vehicles and battery management**:
- 80N04UG-VB can be used as a power switch in the motor controller and battery management system of electric vehicles. Its low on-resistance and high current carrying capacity help improve the power performance and energy efficiency of electric vehicles.
2. **Industrial high-power power supply**:
- In industrial equipment and high-power power modules, this MOSFET can be used for efficient power switching and power management, such as industrial UPS (uninterruptible power supply), inverters and high-frequency switching power supplies.
3. **Server and data center equipment**:
- In the power supply unit and server power management of the data center, 80N04UG-VB can be used to provide high-efficiency and reliable power conversion and management, ensuring stable operation and low energy consumption of the equipment.
4. **Power Inverter and Solar Applications**:
- Due to its high current carrying capability and low on-resistance, this MOSFET is suitable for power inverters, solar inverters and other renewable energy conversion systems to help improve energy efficiency and system reliability.
From the above examples, it can be seen that VBsemi 80N04UG-VB has a wide range of application potentials in many fields, especially in application environments that require high power and high-performance power management.
1. **Electric vehicles and battery management**:
- 80N04UG-VB can be used as a power switch in the motor controller and battery management system of electric vehicles. Its low on-resistance and high current carrying capacity help improve the power performance and energy efficiency of electric vehicles.
2. **Industrial high-power power supply**:
- In industrial equipment and high-power power modules, this MOSFET can be used for efficient power switching and power management, such as industrial UPS (uninterruptible power supply), inverters and high-frequency switching power supplies.
3. **Server and data center equipment**:
- In the power supply unit and server power management of the data center, 80N04UG-VB can be used to provide high-efficiency and reliable power conversion and management, ensuring stable operation and low energy consumption of the equipment.
4. **Power Inverter and Solar Applications**:
- Due to its high current carrying capability and low on-resistance, this MOSFET is suitable for power inverters, solar inverters and other renewable energy conversion systems to help improve energy efficiency and system reliability.
From the above examples, it can be seen that VBsemi 80N04UG-VB has a wide range of application potentials in many fields, especially in application environments that require high power and high-performance power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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