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7NM60N-VB TO252 Product details
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7NM60N-VB MOSFET Product Introduction
7NM60N-VB is a high voltage single N-channel MOSFET in TO252 package, suitable for electronic equipment applications requiring high voltage and low power consumption. The device has high drain voltage, low on-resistance and excellent switching characteristics, suitable for power management and switching control of various industrial and consumer electronic devices.
7NM60N-VB is a high voltage single N-channel MOSFET in TO252 package, suitable for electronic equipment applications requiring high voltage and low power consumption. The device has high drain voltage, low on-resistance and excellent switching characteristics, suitable for power management and switching control of various industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
7NM60N-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 650V
- **Gate-source voltage(VGS)**: ±30V
- **Threshold voltage(Vth)**: 3.5V
- **On-resistance(RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current(ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 650V
- **Gate-source voltage(VGS)**: ±30V
- **Threshold voltage(Vth)**: 3.5V
- **On-resistance(RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current(ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and module application examples
Due to its high voltage tolerance and excellent switching characteristics, the 7NM60N-VB MOSFET is suitable for the following various fields and modules:
1. **Industrial power supply**: In industrial equipment and power supply systems, especially where high voltage and stable current need to be handled, such as high voltage DC-DC converters and switching power supplies.
2. **Electric vehicle charger**: As a key component in electric vehicle charging equipment, it ensures efficient charging speed and battery safety, especially in charging scenarios that need to handle high voltage output.
3. **Power electronics**: In the field of power electronics, especially in inverter and frequency converter applications that need to handle high voltage and high power, the 7NM60N-VB can provide reliable switching and current control.
4. **Power management**: In server and data center equipment, stable and efficient power management is required, and the 7NM60N-VB can ensure efficient operation and energy utilization of equipment.
5. **Solar Inverter**: In solar power generation systems, this device can effectively convert and manage solar power, improving the overall efficiency and reliability of the system.
7NM60N-VB MOSFET is suitable for a variety of electronic devices and systems with high voltage and power requirements through its high performance and reliability, and is an ideal choice for engineers in design.
Due to its high voltage tolerance and excellent switching characteristics, the 7NM60N-VB MOSFET is suitable for the following various fields and modules:
1. **Industrial power supply**: In industrial equipment and power supply systems, especially where high voltage and stable current need to be handled, such as high voltage DC-DC converters and switching power supplies.
2. **Electric vehicle charger**: As a key component in electric vehicle charging equipment, it ensures efficient charging speed and battery safety, especially in charging scenarios that need to handle high voltage output.
3. **Power electronics**: In the field of power electronics, especially in inverter and frequency converter applications that need to handle high voltage and high power, the 7NM60N-VB can provide reliable switching and current control.
4. **Power management**: In server and data center equipment, stable and efficient power management is required, and the 7NM60N-VB can ensure efficient operation and energy utilization of equipment.
5. **Solar Inverter**: In solar power generation systems, this device can effectively convert and manage solar power, improving the overall efficiency and reliability of the system.
7NM60N-VB MOSFET is suitable for a variety of electronic devices and systems with high voltage and power requirements through its high performance and reliability, and is an ideal choice for engineers in design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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