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7N65KL-TF3-T-VB Product details
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7N65KL-TF3-T-VB TO220F MOSFET Product Introduction
The 7N65KL-TF3-T-VB is a single N-channel MOSFET manufactured using planar technology for high voltage and high power applications. It is packaged in TO220F with good heat dissipation and reliability. This MOSFET operates at a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of approximately 3.5V. It has a high on-resistance and moderate drain current capability, making it suitable for applications that need to handle high currents and high voltages.
The 7N65KL-TF3-T-VB is a single N-channel MOSFET manufactured using planar technology for high voltage and high power applications. It is packaged in TO220F with good heat dissipation and reliability. This MOSFET operates at a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of approximately 3.5V. It has a high on-resistance and moderate drain current capability, making it suitable for applications that need to handle high currents and high voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
7N65KL-TF3-T-VB TO220F Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
Power inverter
7N65KL-TF3-T-VB TO220F can be widely used in power inverters and AC to DC converters. Its high drain-source voltage and moderate on-resistance make it an ideal choice in inverter circuits, capable of stabilizing high voltage and high power output, and improving the conversion efficiency and reliability of the system.
Industrial high-voltage power supply module
In the field of industrial control and power management, especially in applications requiring stable high-voltage output, 7N65KL-TF3-T-VB TO220F can provide reliable high-voltage switching functions. Its planar technology and low on-resistance characteristics make it perform well in industrial high-voltage power supply modules, suitable for power management and control of various industrial equipment.
Solar inverter
In solar power generation systems, the inverter needs to be able to stably convert DC power to AC power. The high voltage and moderate current capabilities of the 7N65KL-TF3-T-VB TO220F make it an ideal choice for use in solar inverters, providing reliable energy conversion and stable power output.
Electric Vehicle Charging Stations
In electric vehicle charging stations, power switching devices that can withstand high voltages and currents are required. The 650V drain-source voltage and 7A drain current capability of the 7N65KL-TF3-T-VB TO220F can effectively control the current and ensure the stability of the system, making it suitable for applications with fast charging and long operation.
The 7N65KL-TF3-T-VB TO220F is a MOSFET suitable for high voltage and high power applications, providing excellent performance and reliability in a variety of industrial and power management applications.
Power inverter
7N65KL-TF3-T-VB TO220F can be widely used in power inverters and AC to DC converters. Its high drain-source voltage and moderate on-resistance make it an ideal choice in inverter circuits, capable of stabilizing high voltage and high power output, and improving the conversion efficiency and reliability of the system.
Industrial high-voltage power supply module
In the field of industrial control and power management, especially in applications requiring stable high-voltage output, 7N65KL-TF3-T-VB TO220F can provide reliable high-voltage switching functions. Its planar technology and low on-resistance characteristics make it perform well in industrial high-voltage power supply modules, suitable for power management and control of various industrial equipment.
Solar inverter
In solar power generation systems, the inverter needs to be able to stably convert DC power to AC power. The high voltage and moderate current capabilities of the 7N65KL-TF3-T-VB TO220F make it an ideal choice for use in solar inverters, providing reliable energy conversion and stable power output.
Electric Vehicle Charging Stations
In electric vehicle charging stations, power switching devices that can withstand high voltages and currents are required. The 650V drain-source voltage and 7A drain current capability of the 7N65KL-TF3-T-VB TO220F can effectively control the current and ensure the stability of the system, making it suitable for applications with fast charging and long operation.
The 7N65KL-TF3-T-VB TO220F is a MOSFET suitable for high voltage and high power applications, providing excellent performance and reliability in a variety of industrial and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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