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7N10L-TN3-R-VB Product details
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7N10L-TN3-R-VB MOSFET Product Introduction
7N10L-TN3-R-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for power management and switching applications in various electronic devices. The device has low on-resistance, high drain current and excellent switching characteristics, suitable for circuit design requiring high performance and reliability. The use of advanced Trench technology ensures good thermal stability and electrical performance.
7N10L-TN3-R-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for power management and switching applications in various electronic devices. The device has low on-resistance, high drain current and excellent switching characteristics, suitable for circuit design requiring high performance and reliability. The use of advanced Trench technology ensures good thermal stability and electrical performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
7N10L-TN3-R-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum drain current(ID)**: 15A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.8V
- **On-resistance(RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum drain current(ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applicable fields and module application examples
7N10L-TN3-R-VB MOSFET is suitable for the following fields and modules due to its high drain current and stable characteristics:
1. **Power management module**: Suitable for power management applications such as DC-DC converters, switching power supplies and battery chargers. Its low on-resistance and high drain current enable it to excel in high power conversion and current management.
2. **Motor drive module**: In motor control and drive applications, the high drain current and low on-resistance of 7N10L-TN3-R-VB make it an ideal choice for driving high-power DC motors and stepper motors.
3. **Automotive electronics**: In automotive electronic systems, such as power management and motor control modules for electric vehicles, this MOSFET can provide efficient power conversion and reliable performance to meet the stringent requirements of the automotive environment.
4. **Industrial Control Systems**: 7N10L-TN3-R-VB can be used in industrial automation and control systems such as PLC controllers, industrial power supplies and motor drives. Its stable switching characteristics and high current handling capabilities ensure system reliability and efficiency.
5. **Consumer Electronics**: In high-end consumer electronics such as tablets, server power management and data center equipment, this device can optimize circuit design, improve energy efficiency and reduce heat emissions, extending equipment life.
7N10L-TN3-R-VB MOSFET can play an important role in a variety of application scenarios through its excellent performance characteristics and versatility, and is an indispensable part of modern electronic device design.
7N10L-TN3-R-VB MOSFET is suitable for the following fields and modules due to its high drain current and stable characteristics:
1. **Power management module**: Suitable for power management applications such as DC-DC converters, switching power supplies and battery chargers. Its low on-resistance and high drain current enable it to excel in high power conversion and current management.
2. **Motor drive module**: In motor control and drive applications, the high drain current and low on-resistance of 7N10L-TN3-R-VB make it an ideal choice for driving high-power DC motors and stepper motors.
3. **Automotive electronics**: In automotive electronic systems, such as power management and motor control modules for electric vehicles, this MOSFET can provide efficient power conversion and reliable performance to meet the stringent requirements of the automotive environment.
4. **Industrial Control Systems**: 7N10L-TN3-R-VB can be used in industrial automation and control systems such as PLC controllers, industrial power supplies and motor drives. Its stable switching characteristics and high current handling capabilities ensure system reliability and efficiency.
5. **Consumer Electronics**: In high-end consumer electronics such as tablets, server power management and data center equipment, this device can optimize circuit design, improve energy efficiency and reduce heat emissions, extending equipment life.
7N10L-TN3-R-VB MOSFET can play an important role in a variety of application scenarios through its excellent performance characteristics and versatility, and is an indispensable part of modern electronic device design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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