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79E980-VB Product details
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1. 79E980-VB Product Introduction
79E980-VB is a high-performance single N-channel MOSFET launched by VBsemi, using SOT669 package. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.4V. It has two on-resistance conditions: 7.2 milliohms (mΩ) at VGS = 4.5V and 6 milliohms (mΩ) at VGS = 10V, and the continuous drain current (ID) can reach 90A. It is manufactured using Trench technology and can provide excellent conduction characteristics and stability.
79E980-VB is a high-performance single N-channel MOSFET launched by VBsemi, using SOT669 package. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.4V. It has two on-resistance conditions: 7.2 milliohms (mΩ) at VGS = 4.5V and 6 milliohms (mΩ) at VGS = 10V, and the continuous drain current (ID) can reach 90A. It is manufactured using Trench technology and can provide excellent conduction characteristics and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 7.2(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. 79E980-VB Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-Channel
- **Drain-source voltage(VDS)**: 80V
- **Gate-source voltage(VGS)**: ±20V
- **Gate threshold voltage(Vth)**: 1.4V
- **On-resistance(RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current(ID)**: 90A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-Channel
- **Drain-source voltage(VDS)**: 80V
- **Gate-source voltage(VGS)**: ±20V
- **Gate threshold voltage(Vth)**: 1.4V
- **On-resistance(RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current(ID)**: 90A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
79E980-VB MOSFET is suitable for the following fields and modules due to its high current handling capability and low on-resistance:
1. **Electric vehicle (EV) drive system**: In the motor drive system of electric vehicles, 79E980-VB can be used as the main power switch device for motor control. It can withstand high current and high voltage, and has low on-resistance, which helps to improve the power conversion efficiency and driving performance of the whole vehicle.
2. **Power module**: In high-performance power modules, 79E980-VB can be used as the main switching device of the switching power supply. Its low on-resistance and high current handling capability can ensure that the power module performs well in terms of high efficiency and stability.
3. **Industrial control system**: Applicable to power switch requirements in various industrial control equipment and systems, such as industrial automation, mechanical equipment control, etc. 79E980-VB can provide reliable power switch solutions to ensure stable operation and efficient energy management of equipment.
4. **Solar inverter**: In solar inverters, as a key component of DC to AC conversion, 79E980-VB can reduce losses in the energy conversion process and improve the overall energy efficiency and performance of the system.
5. **Consumer electronics**: In power management modules of high-performance electronic devices such as laptops and servers, this type of MOSFET can be used for power switching and power distribution control to ensure efficient operation and heat dissipation management of the equipment.
In summary, 79E980-VB is a widely applicable high-performance MOSFET, especially suitable for applications that require high power handling and low energy loss, and can provide reliable power control solutions for various electronic systems and devices.
79E980-VB MOSFET is suitable for the following fields and modules due to its high current handling capability and low on-resistance:
1. **Electric vehicle (EV) drive system**: In the motor drive system of electric vehicles, 79E980-VB can be used as the main power switch device for motor control. It can withstand high current and high voltage, and has low on-resistance, which helps to improve the power conversion efficiency and driving performance of the whole vehicle.
2. **Power module**: In high-performance power modules, 79E980-VB can be used as the main switching device of the switching power supply. Its low on-resistance and high current handling capability can ensure that the power module performs well in terms of high efficiency and stability.
3. **Industrial control system**: Applicable to power switch requirements in various industrial control equipment and systems, such as industrial automation, mechanical equipment control, etc. 79E980-VB can provide reliable power switch solutions to ensure stable operation and efficient energy management of equipment.
4. **Solar inverter**: In solar inverters, as a key component of DC to AC conversion, 79E980-VB can reduce losses in the energy conversion process and improve the overall energy efficiency and performance of the system.
5. **Consumer electronics**: In power management modules of high-performance electronic devices such as laptops and servers, this type of MOSFET can be used for power switching and power distribution control to ensure efficient operation and heat dissipation management of the equipment.
In summary, 79E980-VB is a widely applicable high-performance MOSFET, especially suitable for applications that require high power handling and low energy loss, and can provide reliable power control solutions for various electronic systems and devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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