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78E760-VB Product details
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78E760-VB MOSFET Product Introduction
The 78E760-VB is a single N-channel MOSFET manufactured using advanced Trench technology, with low on-resistance and high current handling capability. It is packaged in SOT669 and is suitable for high-efficiency power management and switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, making it excel in high-voltage and high-current applications. With an on-resistance of only 7.8mΩ@VGS=4.5V and 6.2mΩ@VGS=10V, it can provide high efficiency even when driven at low voltages.
The 78E760-VB is a single N-channel MOSFET manufactured using advanced Trench technology, with low on-resistance and high current handling capability. It is packaged in SOT669 and is suitable for high-efficiency power management and switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, making it excel in high-voltage and high-current applications. With an on-resistance of only 7.8mΩ@VGS=4.5V and 6.2mΩ@VGS=10V, it can provide high efficiency even when driven at low voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
78E760-VB Detailed parameter description
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1~3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1~3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
Power management module
The 78E760-VB MOSFET is very suitable for power management modules, especially in high-efficiency power conversion and voltage regulators. Its low on-resistance and high current handling capability enable it to perform well in DC-DC converters (DC-DC Converters) and switch mode power supplies (SMPS), effectively reducing power loss and improving conversion efficiency.
Electric vehicles (EV) and hybrid electric vehicles (HEV)
In the battery management systems and drive circuits of electric vehicles and hybrid electric vehicles, the 78E760-VB can help improve battery charging and discharging efficiency and reduce heat loss, extending the life and reliability of the system due to its high current handling capability and low on-resistance.
Industrial control system
Industrial control systems require reliable and efficient power switching devices to control motors and other high-power loads. The high current handling capability and rugged design of the 78E760-VB make it suitable for a variety of industrial drive and control applications, ensuring system stability and efficiency.
Communications Equipment
In equipment such as communication base stations and data centers, efficient power management is critical. By providing low on-resistance and high current capability, the 78E760-VB can optimize power performance in these applications, ensuring stable operation and high efficiency of the equipment.
The 78E760-VB is an excellent performance MOSFET suitable for a variety of high-efficiency power management and control applications, which can help achieve higher system efficiency and reliability.
Power management module
The 78E760-VB MOSFET is very suitable for power management modules, especially in high-efficiency power conversion and voltage regulators. Its low on-resistance and high current handling capability enable it to perform well in DC-DC converters (DC-DC Converters) and switch mode power supplies (SMPS), effectively reducing power loss and improving conversion efficiency.
Electric vehicles (EV) and hybrid electric vehicles (HEV)
In the battery management systems and drive circuits of electric vehicles and hybrid electric vehicles, the 78E760-VB can help improve battery charging and discharging efficiency and reduce heat loss, extending the life and reliability of the system due to its high current handling capability and low on-resistance.
Industrial control system
Industrial control systems require reliable and efficient power switching devices to control motors and other high-power loads. The high current handling capability and rugged design of the 78E760-VB make it suitable for a variety of industrial drive and control applications, ensuring system stability and efficiency.
Communications Equipment
In equipment such as communication base stations and data centers, efficient power management is critical. By providing low on-resistance and high current capability, the 78E760-VB can optimize power performance in these applications, ensuring stable operation and high efficiency of the equipment.
The 78E760-VB is an excellent performance MOSFET suitable for a variety of high-efficiency power management and control applications, which can help achieve higher system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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