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76137S-VB Product details
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Product Introduction:
MOSFET Model: 76137S-VB
Package: TO263
Configuration: Single N-channel
Withstand voltage (VDS): 30V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)): 2.7mΩ @ VGS=4.5V, 2.4mΩ @ VGS=10V
Drain current (ID): 98A
Technology: Trench
MOSFET Model: 76137S-VB
Package: TO263
Configuration: Single N-channel
Withstand voltage (VDS): 30V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)): 2.7mΩ @ VGS=4.5V, 2.4mΩ @ VGS=10V
Drain current (ID): 98A
Technology: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.7(mΩ) | 2.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description:
- **Package type (Package): ** TO263, suitable for medium and high power applications, with good heat dissipation performance and mechanical strength.
- **Configuration (Configuration): ** Single N-channel, suitable for efficient power switching and control circuit design.
- **Withstand voltage (VDS): ** 30V, able to handle circuit requirements in the medium and low voltage range.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of gate drive voltages.
- **Threshold voltage (Vth): ** 1.7V, sets the gate voltage that starts the MOSFET on.
- **On-resistance (RDS(ON)): ** Under different gate drive voltages, they are 2.7mΩ @ VGS=4.5V and 2.4mΩ @ VGS=10V, respectively, showing low on-resistance, which helps reduce power consumption and heat loss.
- **Drain current (ID): ** 98A, suitable for applications that need to handle high current loads.
- **Technical features (Technology): ** Trench, using a trench structure, improves the switching speed and reliability of the device.
- **Package type (Package): ** TO263, suitable for medium and high power applications, with good heat dissipation performance and mechanical strength.
- **Configuration (Configuration): ** Single N-channel, suitable for efficient power switching and control circuit design.
- **Withstand voltage (VDS): ** 30V, able to handle circuit requirements in the medium and low voltage range.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of gate drive voltages.
- **Threshold voltage (Vth): ** 1.7V, sets the gate voltage that starts the MOSFET on.
- **On-resistance (RDS(ON)): ** Under different gate drive voltages, they are 2.7mΩ @ VGS=4.5V and 2.4mΩ @ VGS=10V, respectively, showing low on-resistance, which helps reduce power consumption and heat loss.
- **Drain current (ID): ** 98A, suitable for applications that need to handle high current loads.
- **Technical features (Technology): ** Trench, using a trench structure, improves the switching speed and reliability of the device.
Domain and module applications：
Application Examples:
1. **Power Management Systems:** The 76137S-VB can be used in power management units and voltage regulators to ensure stable voltage output and efficient energy conversion.
2. **Battery Management Systems:** In power tools, electric vehicles, and portable devices, this MOSFET can be used in battery management systems to support efficient charge and discharge control.
3. **Server and Data Center Equipment:** In power modules for high-performance computers and servers, the 76137S-VB can provide reliable power switching and thermal management to ensure long-term stable operation of the equipment.
The 76137S-VB combines low on-resistance with high current carrying capacity, making it suitable for power electronics applications that require high power density and reliability.
1. **Power Management Systems:** The 76137S-VB can be used in power management units and voltage regulators to ensure stable voltage output and efficient energy conversion.
2. **Battery Management Systems:** In power tools, electric vehicles, and portable devices, this MOSFET can be used in battery management systems to support efficient charge and discharge control.
3. **Server and Data Center Equipment:** In power modules for high-performance computers and servers, the 76137S-VB can provide reliable power switching and thermal management to ensure long-term stable operation of the equipment.
The 76137S-VB combines low on-resistance with high current carrying capacity, making it suitable for power electronics applications that require high power density and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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