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76129S-VB Product details
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1. Product Introduction
**76129S-VB TO263 MOSFET**
76129S-VB TO263 is a single channel N-channel MOSFET that uses Trench technology. It has low on-resistance and high current characteristics and is suitable for power control and switching applications that require high efficiency and low voltage drop.
**76129S-VB TO263 MOSFET**
76129S-VB TO263 is a single channel N-channel MOSFET that uses Trench technology. It has low on-resistance and high current characteristics and is suitable for power control and switching applications that require high efficiency and low voltage drop.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 18(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Parameter Description
- **Packaging form:** TO263
- **Channel configuration:** Single N-channel
- **Withstand voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID):** 50A
- **Technical characteristics:** Trench
- **Packaging form:** TO263
- **Channel configuration:** Single N-channel
- **Withstand voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID):** 50A
- **Technical characteristics:** Trench
Domain and module applications：
3. Application Examples
76129S-VB TO263 MOSFET is suitable for the following fields and modules:
- **Power Management:** In low voltage power supply systems, it is used as a power switching device for switching power regulators and DC-DC converters to provide efficient power conversion and stable voltage output.
- **Power Tools and Electric Vehicles:** In the motor drive control of power tools, electric bicycles and small electric vehicles, it supports high current output and fast dynamic response to improve the power performance and energy efficiency of the equipment.
- **Servers and Data Centers:** It is used as a key component in the power management and power distribution systems in servers and data centers to ensure efficient data processing and energy utilization.
76129S-VB TO263 MOSFET is particularly suitable for electronic devices and systems that require high power density and high efficiency, such as power supply, electric drive and data center applications due to its high current capacity and low on-resistance.
76129S-VB TO263 MOSFET is suitable for the following fields and modules:
- **Power Management:** In low voltage power supply systems, it is used as a power switching device for switching power regulators and DC-DC converters to provide efficient power conversion and stable voltage output.
- **Power Tools and Electric Vehicles:** In the motor drive control of power tools, electric bicycles and small electric vehicles, it supports high current output and fast dynamic response to improve the power performance and energy efficiency of the equipment.
- **Servers and Data Centers:** It is used as a key component in the power management and power distribution systems in servers and data centers to ensure efficient data processing and energy utilization.
76129S-VB TO263 MOSFET is particularly suitable for electronic devices and systems that require high power density and high efficiency, such as power supply, electric drive and data center applications due to its high current capacity and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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