中文
English
75545S-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
MOSFET Model: 75545S-VB
Package: TO263
Configuration: Single N-channel
Withstand voltage (VDS): 80V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 3V
On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
Drain current (ID): 120A
Technology: Trench
MOSFET Model: 75545S-VB
Package: TO263
Configuration: Single N-channel
Withstand voltage (VDS): 80V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 3V
On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
Drain current (ID): 120A
Technology: Trench
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 10(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description:
- **Package type (Package): ** TO263, suitable for medium power applications, with good heat dissipation performance and high power handling capability.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 80V, suitable for medium voltage applications.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 3V, suitable for switching circuits and power management systems with higher requirements.
- **On-resistance (RDS(ON)): **
- 10mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 6mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID): ** 120A, capable of handling large current loads, suitable for high-power applications.
- **Technical features (Technology): ** Trench, using a trench structure, improves the performance and reliability of the device.
- **Package type (Package): ** TO263, suitable for medium power applications, with good heat dissipation performance and high power handling capability.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 80V, suitable for medium voltage applications.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 3V, suitable for switching circuits and power management systems with higher requirements.
- **On-resistance (RDS(ON)): **
- 10mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 6mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID): ** 120A, capable of handling large current loads, suitable for high-power applications.
- **Technical features (Technology): ** Trench, using a trench structure, improves the performance and reliability of the device.
Domain and module applications：
Application Examples:
1. **Electric Vehicles:** The 75545S-VB can be used in the motor control and battery management systems of electric vehicles, supporting high-power motor drive and battery charging management, improving the performance and endurance of the vehicle.
2. **Industrial Power Systems:** In industrial automation and power systems, this MOSFET can be used for high-efficiency switching power supply design, as well as current regulation and protection of industrial equipment.
3. **Servers and Communication Equipment:** Suitable for high-frequency switching power supplies in servers and communication equipment, supporting high-speed data processing and stable power supply.
The 75545S-VB demonstrates its excellent performance under high current and medium voltage conditions, and is suitable for a variety of applications requiring high performance and reliability.
1. **Electric Vehicles:** The 75545S-VB can be used in the motor control and battery management systems of electric vehicles, supporting high-power motor drive and battery charging management, improving the performance and endurance of the vehicle.
2. **Industrial Power Systems:** In industrial automation and power systems, this MOSFET can be used for high-efficiency switching power supply design, as well as current regulation and protection of industrial equipment.
3. **Servers and Communication Equipment:** Suitable for high-frequency switching power supplies in servers and communication equipment, supporting high-speed data processing and stable power supply.
The 75545S-VB demonstrates its excellent performance under high current and medium voltage conditions, and is suitable for a variety of applications requiring high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
