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75332S-VB Product details
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Product profile details:
VBsemi MOSFET model 75332S-VB, in TO263 package, is a single-channel N-channel MOSFET. Its main features include 60V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.7V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V. Its maximum drain current (ID) is 75A, using Trench technology.
VBsemi MOSFET model 75332S-VB, in TO263 package, is a single-channel N-channel MOSFET. Its main features include 60V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.7V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V. Its maximum drain current (ID) is 75A, using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type: ** TO263
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID): ** 75A
- **Technology: ** Trench
- **Package type: ** TO263
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID): ** 75A
- **Technology: ** Trench
Domain and module applications：
Application Examples:
1. **Electric Vehicles:** The 75332S-VB can be used in battery management systems and electric drive control for electric vehicles. Its high drain voltage and low on-resistance characteristics support high-efficiency energy conversion and power management, and are suitable for providing power output and drive control.
2. **Power Management:** In switching power supply units and DC-DC converters, this MOSFET can provide efficient power conversion. Its high current carrying capacity and low on-resistance help improve the power density and efficiency of power management modules.
3. **Industrial Automation:** In power electronics modules in industrial automation equipment, the 75332S-VB supports efficient power conversion and power management. It can provide stable power output under high loads and frequent operations, ensuring the reliability and operating efficiency of equipment.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. Its high drain voltage and low on-resistance ensure continuous operation of equipment and data protection during grid instability or power outages.
The above examples show that 75332S-VB is widely used in many fields. Its unique technical advantages make it an ideal choice for various high-performance electronic systems.
1. **Electric Vehicles:** The 75332S-VB can be used in battery management systems and electric drive control for electric vehicles. Its high drain voltage and low on-resistance characteristics support high-efficiency energy conversion and power management, and are suitable for providing power output and drive control.
2. **Power Management:** In switching power supply units and DC-DC converters, this MOSFET can provide efficient power conversion. Its high current carrying capacity and low on-resistance help improve the power density and efficiency of power management modules.
3. **Industrial Automation:** In power electronics modules in industrial automation equipment, the 75332S-VB supports efficient power conversion and power management. It can provide stable power output under high loads and frequent operations, ensuring the reliability and operating efficiency of equipment.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. Its high drain voltage and low on-resistance ensure continuous operation of equipment and data protection during grid instability or power outages.
The above examples show that 75332S-VB is widely used in many fields. Its unique technical advantages make it an ideal choice for various high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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