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74E440-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi 74E440-VB SOT669 is a single-channel N-type power MOSFET that uses Trench trench structure technology and is suitable for applications requiring high efficiency and low on-resistance. The device has a drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) range of 20V. It is designed to optimize on-resistance and switching characteristics, and is suitable for high current and fast switching power control circuits.
VBsemi 74E440-VB SOT669 is a single-channel N-type power MOSFET that uses Trench trench structure technology and is suitable for applications requiring high efficiency and low on-resistance. The device has a drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) range of 20V. It is designed to optimize on-resistance and switching characteristics, and is suitable for high current and fast switching power control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2.4(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description:
- **Package type (Package)**: SOT669
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V (typical)
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
- **Package type (Package)**: SOT669
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V (typical)
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
Domain and module applications：
3. Application Examples:
74E440-VB SOT669 has a wide range of applications in multiple fields and modules:
- **Electric Vehicles**: In the motor drive system and battery management unit of electric vehicles, power switching devices that can handle high voltage and high current are required. The 40V drain voltage and 100A drain current capability of this MOSFET make it an ideal choice in electric vehicles, supporting efficient electric drive and fast charging functions.
- **Power Converters**: In various types of power converters and switching power supplies, power switching devices with fast switching and low on-resistance are required to improve energy conversion efficiency and stability.
- **Industrial Control**: In industrial automation and robot control systems, this MOSFET can be used for switching control of motor drives and high-power loads, helping to improve the operating efficiency and reliability of equipment.
The above examples demonstrate the product’s potential for application in areas such as electric vehicles, power converters, and industrial control, demonstrating its superior performance and wide applicability under high voltage, high current, and low on-resistance requirements.
74E440-VB SOT669 has a wide range of applications in multiple fields and modules:
- **Electric Vehicles**: In the motor drive system and battery management unit of electric vehicles, power switching devices that can handle high voltage and high current are required. The 40V drain voltage and 100A drain current capability of this MOSFET make it an ideal choice in electric vehicles, supporting efficient electric drive and fast charging functions.
- **Power Converters**: In various types of power converters and switching power supplies, power switching devices with fast switching and low on-resistance are required to improve energy conversion efficiency and stability.
- **Industrial Control**: In industrial automation and robot control systems, this MOSFET can be used for switching control of motor drives and high-power loads, helping to improve the operating efficiency and reliability of equipment.
The above examples demonstrate the product’s potential for application in areas such as electric vehicles, power converters, and industrial control, demonstrating its superior performance and wide applicability under high voltage, high current, and low on-resistance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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