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73810E-VB Product details
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Product profile details:
VBsemi MOSFET model 73810E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.4V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. Its maximum drain current (ID) is 69A, using Trench technology.
VBsemi MOSFET model 73810E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.4V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. Its maximum drain current (ID) is 69A, using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description:
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Maximum drain current (ID): ** 69A
- **Technology: ** Trench
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Maximum drain current (ID): ** 69A
- **Technology: ** Trench
Domain and module applications：
Application Examples:
1. **Electric Vehicle Battery Management System:** The 73810E-VB is suitable for battery management systems and motor drive control in electric vehicles. Its high drain voltage and high current carrying capacity enable it to handle high power output and frequent power demands while maintaining high efficiency conversion.
2. **Power Modules:** In switching power supply units and DC-DC converters, this MOSFET can provide efficient power conversion. Its low on-resistance and high current characteristics are suitable for applications that require high-performance power management.
3. **Industrial Automation:** In power electronics modules in industrial equipment, the 73810E-VB supports efficient power conversion and power management. It can provide stable power output under high loads and frequent operations, ensuring the reliability and efficiency of equipment.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. With its high drain voltage and low on-resistance, it can provide reliable power supply protection in unstable power grid environments to ensure continuous operation of equipment.
The above examples demonstrate the application potential of 73810E-VB in multiple fields. Its unique technical advantages make it an ideal choice for various high-performance electronic systems.
1. **Electric Vehicle Battery Management System:** The 73810E-VB is suitable for battery management systems and motor drive control in electric vehicles. Its high drain voltage and high current carrying capacity enable it to handle high power output and frequent power demands while maintaining high efficiency conversion.
2. **Power Modules:** In switching power supply units and DC-DC converters, this MOSFET can provide efficient power conversion. Its low on-resistance and high current characteristics are suitable for applications that require high-performance power management.
3. **Industrial Automation:** In power electronics modules in industrial equipment, the 73810E-VB supports efficient power conversion and power management. It can provide stable power output under high loads and frequent operations, ensuring the reliability and efficiency of equipment.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. With its high drain voltage and low on-resistance, it can provide reliable power supply protection in unstable power grid environments to ensure continuous operation of equipment.
The above examples demonstrate the application potential of 73810E-VB in multiple fields. Its unique technical advantages make it an ideal choice for various high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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