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72T03GJ-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi 72T03GJ-VB TO251 is a single-channel N-type power MOSFET designed for applications requiring high performance and low on-resistance. The device has a drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) range of 20V. It uses Trench trench structure technology to optimize on-resistance and switching characteristics, and is suitable for power control circuits that require high current and fast switching.
VBsemi 72T03GJ-VB TO251 is a single-channel N-type power MOSFET designed for applications requiring high performance and low on-resistance. The device has a drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) range of 20V. It uses Trench trench structure technology to optimize on-resistance and switching characteristics, and is suitable for power control circuits that require high current and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description:
- **Package type (Package)**: TO251
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
- **Package type (Package)**: TO251
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
Domain and module applications：
3. Application Examples:
72T03GJ-VB TO251 is widely used in many fields and modules:
- **Power Management**: In power converters and switching power supply units, power switching devices with fast switching and low on-resistance are required. The low on-resistance and high drain current characteristics of this MOSFET make it an ideal choice for power management, helping to improve power conversion efficiency and stability.
- **Consumer Electronics**: In consumer electronic devices such as smartphones, tablets and laptops, this MOSFET can be used in power management units and charging circuits to provide high-efficiency and fast-response power conversion and control.
- **Communication Equipment**: In communication equipment such as routers, switches and base stations, this MOSFET can be used in power modules and signal amplifiers to support high-efficiency power management and signal processing, ensuring stable operation and high efficiency of the equipment.
The above examples demonstrate the product’s potential for application in power management, consumer electronics, and communications equipment, demonstrating its superior performance and wide applicability under high current, fast switching, and low on-resistance requirements.
72T03GJ-VB TO251 is widely used in many fields and modules:
- **Power Management**: In power converters and switching power supply units, power switching devices with fast switching and low on-resistance are required. The low on-resistance and high drain current characteristics of this MOSFET make it an ideal choice for power management, helping to improve power conversion efficiency and stability.
- **Consumer Electronics**: In consumer electronic devices such as smartphones, tablets and laptops, this MOSFET can be used in power management units and charging circuits to provide high-efficiency and fast-response power conversion and control.
- **Communication Equipment**: In communication equipment such as routers, switches and base stations, this MOSFET can be used in power modules and signal amplifiers to support high-efficiency power management and signal processing, ensuring stable operation and high efficiency of the equipment.
The above examples demonstrate the product’s potential for application in power management, consumer electronics, and communications equipment, demonstrating its superior performance and wide applicability under high current, fast switching, and low on-resistance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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