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72560E-VB Product details
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Product profile details:
VBsemi MOSFET model 72560E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 60V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1~3V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 7.8mΩ @ VGS=4.5V and 6.2mΩ @ VGS=10V. Its maximum drain current (ID) is 64A, using Trench technology.
VBsemi MOSFET model 72560E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 60V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1~3V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 7.8mΩ @ VGS=4.5V and 6.2mΩ @ VGS=10V. Its maximum drain current (ID) is 64A, using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 7.8(mΩ) | 6.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description:
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1~3V
- **On-resistance (RDS(ON)): **
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Maximum drain current (ID): ** 64A
- **Technology: ** Trench
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1~3V
- **On-resistance (RDS(ON)): **
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Maximum drain current (ID): ** 64A
- **Technology: ** Trench
Domain and module applications：
Application Examples:
1. **Electric Vehicle Battery Management System:** The 72560E-VB is suitable for battery management systems and motor drive control in electric vehicles. Its low on-resistance and high current capability enable it to excel in handling high current and high frequency operations, providing efficient energy conversion and stable power output.
2. **Power Module:** In power modules, this MOSFET can be used in switching power supply units and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion and meet the high performance requirements of power modules.
3. **Industrial Automation:** In power electronics modules in industrial automation equipment, the 72560E-VB supports efficient power management and power efficiency, ensuring stable operation and energy-saving optimization of equipment under high load and frequent operation.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. Its high current capability and low on-resistance enable it to provide reliable power supply in power inverter and UPS systems, ensuring continuous operation of equipment when the power grid is unstable or outages occur.
These application examples show the wide application of the 72560E-VB in multiple fields. Its low on-resistance, high current capability and high-efficiency conversion characteristics make it an ideal choice for various high-performance electronic systems.
1. **Electric Vehicle Battery Management System:** The 72560E-VB is suitable for battery management systems and motor drive control in electric vehicles. Its low on-resistance and high current capability enable it to excel in handling high current and high frequency operations, providing efficient energy conversion and stable power output.
2. **Power Module:** In power modules, this MOSFET can be used in switching power supply units and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion and meet the high performance requirements of power modules.
3. **Industrial Automation:** In power electronics modules in industrial automation equipment, the 72560E-VB supports efficient power management and power efficiency, ensuring stable operation and energy-saving optimization of equipment under high load and frequent operation.
4. **Server and Data Center Equipment:** This MOSFET is suitable for power management systems in servers and data centers. Its high current capability and low on-resistance enable it to provide reliable power supply in power inverter and UPS systems, ensuring continuous operation of equipment when the power grid is unstable or outages occur.
These application examples show the wide application of the 72560E-VB in multiple fields. Its low on-resistance, high current capability and high-efficiency conversion characteristics make it an ideal choice for various high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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