中文
English
72210E-VB Product details
Back to previous pageProduct introduction：
Product profile details:
MOSFET model: 72210E-VB
Package: SOT669
Configuration: Single N-channel
Withstand voltage (VDS): 100V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.4V
On-resistance (RDS(ON)):
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
Drain current (ID): 69A
Technology: Trench
MOSFET model: 72210E-VB
Package: SOT669
Configuration: Single N-channel
Withstand voltage (VDS): 100V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.4V
On-resistance (RDS(ON)):
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
Drain current (ID): 69A
Technology: Trench
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description:
- **Package type**: SOT669, compact package, suitable for high-density circuit design.
- **Configuration**: Single N-channel design, optimized on-resistance and switching speed.
- **Withstand voltage**: 100V, suitable for high-voltage power supply and circuit control applications.
- **Gate drive**: Supports gate-source voltage up to ±20V, providing flexible control.
- **Threshold voltage**: 1.4V, ensuring good turn-on and turn-off characteristics at low voltage.
- **On-resistance**:
- 13.92mΩ @ VGS=4.5V, low on-resistance effectively reduces power loss at low voltage.
- 11.6mΩ @ VGS=10V, further reduces power loss, suitable for high voltage operation.
- **Drain current**: 69A, able to handle the needs of high current loads.
- **Package type**: SOT669, compact package, suitable for high-density circuit design.
- **Configuration**: Single N-channel design, optimized on-resistance and switching speed.
- **Withstand voltage**: 100V, suitable for high-voltage power supply and circuit control applications.
- **Gate drive**: Supports gate-source voltage up to ±20V, providing flexible control.
- **Threshold voltage**: 1.4V, ensuring good turn-on and turn-off characteristics at low voltage.
- **On-resistance**:
- 13.92mΩ @ VGS=4.5V, low on-resistance effectively reduces power loss at low voltage.
- 11.6mΩ @ VGS=10V, further reduces power loss, suitable for high voltage operation.
- **Drain current**: 69A, able to handle the needs of high current loads.
Domain and module applications：
Application Examples:
1. **Power Converters**: 72210E-VB SOT669 MOSFETs can be used in high-efficiency power converters and DC-DC converters to improve energy conversion efficiency and power density.
2. **Power Tools**: In the motor drive system of power tools, this MOSFET can be used as a key component for motor control and power output, ensuring high performance and long-term reliability of the tools.
3. **Electric Vehicles**: Suitable for battery management systems and electric drive control in electric vehicles, supporting efficient energy conversion and power management.
4. **Industrial Automation**: Power amplifiers and switch controls for industrial motor drives and automation equipment, ensuring stable operation and high efficiency of the equipment.
5. **Server Power**: Used as current switches and voltage stabilizers in power management modules for high-performance servers and data centers, providing stable power output and energy-saving advantages.
These examples demonstrate the wide application of the 72210E-VB SOT669 MOSFET in multiple fields and modules, showing its excellent performance and suitability for use in high-voltage, high-efficiency electronic systems.
1. **Power Converters**: 72210E-VB SOT669 MOSFETs can be used in high-efficiency power converters and DC-DC converters to improve energy conversion efficiency and power density.
2. **Power Tools**: In the motor drive system of power tools, this MOSFET can be used as a key component for motor control and power output, ensuring high performance and long-term reliability of the tools.
3. **Electric Vehicles**: Suitable for battery management systems and electric drive control in electric vehicles, supporting efficient energy conversion and power management.
4. **Industrial Automation**: Power amplifiers and switch controls for industrial motor drives and automation equipment, ensuring stable operation and high efficiency of the equipment.
5. **Server Power**: Used as current switches and voltage stabilizers in power management modules for high-performance servers and data centers, providing stable power output and energy-saving advantages.
These examples demonstrate the wide application of the 72210E-VB SOT669 MOSFET in multiple fields and modules, showing its excellent performance and suitability for use in high-voltage, high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
