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71510E-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi 71510E-VB SOT669 is a single-channel N-type power MOSFET designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) range of 20V. It uses Trench trench structure technology to optimize on-resistance and switching characteristics, and is suitable for power control circuits that require high efficiency and low on-resistance.
VBsemi 71510E-VB SOT669 is a single-channel N-type power MOSFET designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) range of 20V. It uses Trench trench structure technology to optimize on-resistance and switching characteristics, and is suitable for power control circuits that require high efficiency and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description:
- **Package type (Package)**: SOT669
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V (typical)
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Drain current (ID)**: 69A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
- **Package type (Package)**: SOT669
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V (typical)
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Drain current (ID)**: 69A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
Domain and module applications：
3. Application Examples:
71510E-VB SOT669 is widely used in many fields and modules:
- **Electric Vehicles**: In the electric drive system and battery management unit of electric vehicles, power switching devices that can handle high voltage and high current are required. The 100V drain voltage and 69A drain current capability of this MOSFET make it an ideal choice for electric vehicles, supporting efficient electric drive and fast charging functions.
- **Power Converters**: In various types of power converters and switching power supplies, power switching devices with fast switching and low on-resistance are required to improve energy conversion efficiency and stability.
- **Industrial Control**: In industrial automation and robot control systems, this MOSFET can be used for switching control of motor drives and high-power loads, which helps improve the operating efficiency and reliability of equipment.
The above examples demonstrate the product’s potential for application in areas such as electric vehicles, power converters, and industrial control, demonstrating its superior performance and wide applicability under high voltage, high current, and low on-resistance requirements.
71510E-VB SOT669 is widely used in many fields and modules:
- **Electric Vehicles**: In the electric drive system and battery management unit of electric vehicles, power switching devices that can handle high voltage and high current are required. The 100V drain voltage and 69A drain current capability of this MOSFET make it an ideal choice for electric vehicles, supporting efficient electric drive and fast charging functions.
- **Power Converters**: In various types of power converters and switching power supplies, power switching devices with fast switching and low on-resistance are required to improve energy conversion efficiency and stability.
- **Industrial Control**: In industrial automation and robot control systems, this MOSFET can be used for switching control of motor drives and high-power loads, which helps improve the operating efficiency and reliability of equipment.
The above examples demonstrate the product’s potential for application in areas such as electric vehicles, power converters, and industrial control, demonstrating its superior performance and wide applicability under high voltage, high current, and low on-resistance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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