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711310E-VB Product details
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Product profile details:
VBsemi MOSFET model 711310E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.4V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. Its maximum drain current (ID) is 69A, using Trench technology.
VBsemi MOSFET model 711310E-VB, in SOT669 package, is a single-channel N-channel MOSFET. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive or negative), 1.4V threshold voltage (Vth), and on-resistance (RDS(ON)) at different gate-source voltages: 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. Its maximum drain current (ID) is 69A, using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 13.92(mΩ) | 11.6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description:
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Maximum drain current (ID): ** 69A
- **Technology: ** Trench
- **Package type: ** SOT669
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.4V
- **On-resistance (RDS(ON)): **
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Maximum drain current (ID): ** 69A
- **Technology: ** Trench
Domain and module applications：
Application examples:
1. **Electric vehicle battery management system:** The 711310E-VB is suitable for battery management systems and motor drive control in electric vehicles. It can handle high current and high frequency operations, provide stable power output and efficient energy conversion.
2. **Power modules:** In power modules, this MOSFET can be used in switching power supply units and DC-DC converters to provide efficient power conversion through its low on-resistance and high current carrying capacity.
3. **Industrial automation:** In power electronics modules in industrial automation equipment, the 711310E-VB supports high requirements for power management and power efficiency, ensuring stable operation and energy-saving optimization of equipment.
4. **Server and data center equipment:** In power management systems for servers and data centers, this MOSFET can be used in power inverters and UPS systems to ensure reliable power supply to equipment when the power grid is unstable or power outages occur.
These application examples demonstrate the wide range of applications of the 711310E-VB in multiple fields. Its low on-resistance, high current and high efficiency conversion characteristics make it an ideal choice for a variety of high-performance electronic systems.
1. **Electric vehicle battery management system:** The 711310E-VB is suitable for battery management systems and motor drive control in electric vehicles. It can handle high current and high frequency operations, provide stable power output and efficient energy conversion.
2. **Power modules:** In power modules, this MOSFET can be used in switching power supply units and DC-DC converters to provide efficient power conversion through its low on-resistance and high current carrying capacity.
3. **Industrial automation:** In power electronics modules in industrial automation equipment, the 711310E-VB supports high requirements for power management and power efficiency, ensuring stable operation and energy-saving optimization of equipment.
4. **Server and data center equipment:** In power management systems for servers and data centers, this MOSFET can be used in power inverters and UPS systems to ensure reliable power supply to equipment when the power grid is unstable or power outages occur.
These application examples demonstrate the wide range of applications of the 711310E-VB in multiple fields. Its low on-resistance, high current and high efficiency conversion characteristics make it an ideal choice for a variety of high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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