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70T03GH-VB Product details
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Product Introduction:
MOSFET Model: 70T03GH-VB
Package: TO252
Configuration: Single N-channel
Withstand voltage (VDS): 30V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)): 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V
Drain current (ID): 80A
Technology: Trench
MOSFET Model: 70T03GH-VB
Package: TO252
Configuration: Single N-channel
Withstand voltage (VDS): 30V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)): 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V
Drain current (ID): 80A
Technology: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type (Package): ** TO252, suitable for medium power applications, with good heat dissipation performance and compact package size.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 30V, suitable for low voltage applications.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 1.7V, ensuring reliable switching operation.
- **On-resistance (RDS(ON)): **
- 6mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 5mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID): ** 80A, capable of handling high current loads.
- **Technology features: ** Trench, using trench structure, improves the performance and reliability of the device.
- **Package type (Package): ** TO252, suitable for medium power applications, with good heat dissipation performance and compact package size.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 30V, suitable for low voltage applications.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 1.7V, ensuring reliable switching operation.
- **On-resistance (RDS(ON)): **
- 6mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 5mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID): ** 80A, capable of handling high current loads.
- **Technology features: ** Trench, using trench structure, improves the performance and reliability of the device.
Domain and module applications：
Application Examples:
1. **Power Management Modules:** The 70T03GH-VB is suitable for power management modules such as battery management systems in laptops and mobile devices, providing efficient power conversion and energy saving functions.
2. **DC-DC Converters:** In DC-DC converters, this MOSFET can be used for efficient voltage conversion and current control, suitable for wireless communication equipment and industrial automation systems.
3. **Automotive Electronic Systems:** Due to its high current handling capability and low on-resistance characteristics, it is suitable for battery management, motor drive and power conversion in automotive electronic systems to improve vehicle performance and efficiency.
These examples show the wide application of the 70T03GH-VB in different fields and application modules, showing its excellent performance and reliability under high current and low voltage drop conditions.
1. **Power Management Modules:** The 70T03GH-VB is suitable for power management modules such as battery management systems in laptops and mobile devices, providing efficient power conversion and energy saving functions.
2. **DC-DC Converters:** In DC-DC converters, this MOSFET can be used for efficient voltage conversion and current control, suitable for wireless communication equipment and industrial automation systems.
3. **Automotive Electronic Systems:** Due to its high current handling capability and low on-resistance characteristics, it is suitable for battery management, motor drive and power conversion in automotive electronic systems to improve vehicle performance and efficiency.
These examples show the wide application of the 70T03GH-VB in different fields and application modules, showing its excellent performance and reliability under high current and low voltage drop conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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