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70N10F4-VB TO262 Product details
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Product Introduction:
MOSFET model: 70N10F4-VB
Package: TO262
Configuration: Single N-channel
Withstand voltage (VDS): 100V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 2.5V
On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V
Drain current (ID): 100A
Technology: Trench
MOSFET model: 70N10F4-VB
Package: TO262
Configuration: Single N-channel
Withstand voltage (VDS): 100V
Gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 2.5V
On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V
Drain current (ID): 100A
Technology: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 10(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description:
- **Package type (Package): ** TO262, suitable for medium power applications, with good heat dissipation performance and compact package size.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 100V, suitable for medium and high voltage circuits and power management systems.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 2.5V, ensuring reliable switching operation.
- **On-resistance (RDS(ON)): **
- 10mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 9mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID):** 100A, capable of handling high current loads.
- **Technical features (Technology):** Trench, using a trench structure, improves the performance and reliability of the device.
- **Package type (Package): ** TO262, suitable for medium power applications, with good heat dissipation performance and compact package size.
- **Configuration (Configuration): ** Single N-channel, suitable for switching and linear control applications.
- **Withstand voltage (VDS): ** 100V, suitable for medium and high voltage circuits and power management systems.
- **Gate-source voltage (VGS): ** ±20V, supporting a wide range of drive voltages.
- **Threshold voltage (Vth): ** 2.5V, ensuring reliable switching operation.
- **On-resistance (RDS(ON)): **
- 10mΩ @ VGS=4.5V, on-resistance at low drive voltage.
- 9mΩ @ VGS=10V, lower on-resistance at standard drive voltage, helps reduce power consumption and heat loss.
- **Drain current (ID):** 100A, capable of handling high current loads.
- **Technical features (Technology):** Trench, using a trench structure, improves the performance and reliability of the device.
Domain and module applications：
Application Examples:
1. **Power Switches and Voltage Regulators:** The 70N10F4-VB is suitable for power switches and voltage regulators, such as high-efficiency power management in server power supplies and industrial power systems.
2. **Electric Vehicle Motor Drive:** In the motor drive systems of electric vehicles and electric bicycles, this MOSFET can be used for motor control and high-efficiency energy conversion to improve the vehicle's power performance and driving distance.
3. **Industrial Automation Equipment:** Due to its high current and low on-resistance characteristics, it is suitable for motor control, power switches, and drive circuits in industrial automation equipment to ensure stable operation and high efficiency of the equipment.
These examples show the wide application of the 70N10F4-VB in different fields and application modules, showing its excellent performance and reliability under high voltage, high current and high efficiency requirements.
1. **Power Switches and Voltage Regulators:** The 70N10F4-VB is suitable for power switches and voltage regulators, such as high-efficiency power management in server power supplies and industrial power systems.
2. **Electric Vehicle Motor Drive:** In the motor drive systems of electric vehicles and electric bicycles, this MOSFET can be used for motor control and high-efficiency energy conversion to improve the vehicle's power performance and driving distance.
3. **Industrial Automation Equipment:** Due to its high current and low on-resistance characteristics, it is suitable for motor control, power switches, and drive circuits in industrial automation equipment to ensure stable operation and high efficiency of the equipment.
These examples show the wide application of the 70N10F4-VB in different fields and application modules, showing its excellent performance and reliability under high voltage, high current and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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