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70N03S-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi 70N03S-VB TO263 is a single-channel N-type power MOSFET designed for high current and low on-resistance requirements. With a drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) range of 20V, it is suitable for power switch applications that require high performance and high reliability. Trench trench structure technology is used to optimize on-resistance and switching characteristics.
VBsemi 70N03S-VB TO263 is a single-channel N-type power MOSFET designed for high current and low on-resistance requirements. With a drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) range of 20V, it is suitable for power switch applications that require high performance and high reliability. Trench trench structure technology is used to optimize on-resistance and switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.7(mΩ) | 2.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description:
- **Package type (Package)**: TO263
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
- **Package type (Package)**: TO263
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technical characteristics (Technology)**: Trench (trench structure technology)
Domain and module applications：
3. Application Examples:
70N03S-VB TO263 is widely used in multiple fields and modules:
- **Electric Vehicles**: In the motor control and battery management system of electric vehicles, power switching devices that can handle high current and low on-resistance are required. The 98A drain current and extremely low on-resistance characteristics of this MOSFET can support the high-efficiency drive and energy-saving operation of electric vehicles.
- **Servers and Data Centers**: In high-performance computing and data storage systems, power devices that can switch quickly and conduct current efficiently are required to ensure system stability and power consumption efficiency.
- **Industrial Automation**: In industrial control and automation equipment, reliable power switching devices are required to handle high current and high-frequency switching requirements, such as motor drives, inverters, and power management units.
These application scenarios demonstrate the superior performance and wide applicability of this product in handling high current and low on-resistance requirements, reflecting its important role in various high-power electronic devices.
70N03S-VB TO263 is widely used in multiple fields and modules:
- **Electric Vehicles**: In the motor control and battery management system of electric vehicles, power switching devices that can handle high current and low on-resistance are required. The 98A drain current and extremely low on-resistance characteristics of this MOSFET can support the high-efficiency drive and energy-saving operation of electric vehicles.
- **Servers and Data Centers**: In high-performance computing and data storage systems, power devices that can switch quickly and conduct current efficiently are required to ensure system stability and power consumption efficiency.
- **Industrial Automation**: In industrial control and automation equipment, reliable power switching devices are required to handle high current and high-frequency switching requirements, such as motor drives, inverters, and power management units.
These application scenarios demonstrate the superior performance and wide applicability of this product in handling high current and low on-resistance requirements, reflecting its important role in various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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