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6R520C6-VB TO252 Product details
Back to previous pageProduct introduction：
1. Product Introduction:
VBsemi 6R520C6-VB TO252 is a single-channel N-type power MOSFET suitable for medium power and high voltage applications. It is designed with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V to meet the power switching requirements in industrial and consumer electronic devices. Its optimized structural design and multi-epitaxial technology (SJ_Multi-EPI) ensure high performance and reliability.
VBsemi 6R520C6-VB TO252 is a single-channel N-type power MOSFET suitable for medium power and high voltage applications. It is designed with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V to meet the power switching requirements in industrial and consumer electronic devices. Its optimized structural design and multi-epitaxial technology (SJ_Multi-EPI) ensure high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type (Package)**: TO252
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology characteristics (Technology)**: SJ_Multi-EPI (multiple epitaxial technology)
- **Package type (Package)**: TO252
- **Configuration (Configuration)**: Single N-type channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology characteristics (Technology)**: SJ_Multi-EPI (multiple epitaxial technology)
Domain and module applications：
3. Application Examples:
6R520C6-VB TO252 is suitable for a variety of fields and modules:
- **Power Adapter**: In medium-power power adapters, this MOSFET can be used as a switch tube to help achieve high efficiency and miniaturization.
- **Lighting Driver**: In the driver of the LED lighting system, a power switch device capable of handling higher voltage and current is required. The 650V drain voltage and 9A drain current of the 6R520C6-VB TO252 make it an ideal choice for lighting applications.
- **Industrial Control System**: In industrial automation and control systems, this MOSFET can be used in motor drives and inverters to support high-efficiency power conversion in various industrial applications.
These examples show the wide application of this product under medium-power and high-voltage requirements, reflecting its superior performance and applicability in fields such as industry, consumer electronics and lighting.
6R520C6-VB TO252 is suitable for a variety of fields and modules:
- **Power Adapter**: In medium-power power adapters, this MOSFET can be used as a switch tube to help achieve high efficiency and miniaturization.
- **Lighting Driver**: In the driver of the LED lighting system, a power switch device capable of handling higher voltage and current is required. The 650V drain voltage and 9A drain current of the 6R520C6-VB TO252 make it an ideal choice for lighting applications.
- **Industrial Control System**: In industrial automation and control systems, this MOSFET can be used in motor drives and inverters to support high-efficiency power conversion in various industrial applications.
These examples show the wide application of this product under medium-power and high-voltage requirements, reflecting its superior performance and applicability in fields such as industry, consumer electronics and lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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