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6R190E6-VB TO247 Product details
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1. Product Introduction
**6R190E6-VB TO247 MOSFET**
6R190E6-VB TO247 is a single channel N-channel MOSFET designed for high voltage applications. It uses SJ_Multi-EPI technology and has stable performance and reliable operating characteristics. The main features of this model include low on-resistance and high withstand voltage capability, suitable for a variety of industrial and electronic applications.
**6R190E6-VB TO247 MOSFET**
6R190E6-VB TO247 is a single channel N-channel MOSFET designed for high voltage applications. It uses SJ_Multi-EPI technology and has stable performance and reliable operating characteristics. The main features of this model include low on-resistance and high withstand voltage capability, suitable for a variety of industrial and electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Parameter Description
- **Packaging:** TO247
- **Channel Configuration:** Single N-channel
- **Withstand Voltage (VDS):** 650V
- **Gate-Source Voltage (VGS):** ±30V
- **Gate Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain Current (ID):** 20A
- **Technical Characteristics:** SJ_Multi-EPI
- **Packaging:** TO247
- **Channel Configuration:** Single N-channel
- **Withstand Voltage (VDS):** 650V
- **Gate-Source Voltage (VGS):** ±30V
- **Gate Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain Current (ID):** 20A
- **Technical Characteristics:** SJ_Multi-EPI
Domain and module applications：
3. Application Examples
6R190E6-VB TO247 MOSFET is suitable for the following fields and modules:
- **Power converter:** In power converters, this MOSFET can be used in high-efficiency DC-DC converters and AC-DC rectifiers. Due to its low on-resistance and high withstand voltage characteristics, it can effectively reduce power losses and improve conversion efficiency.
- **Industrial drive:** In industrial motor drive and control systems, this device can provide stable switching characteristics and fast switching speeds, suitable for various industrial automation and power tool drives.
- **Electric vehicle charger:** Used as a switching device in electric vehicle chargers to ensure an efficient charging process and provide the necessary current and voltage regulation.
These examples show the versatility and applicability of the 6R190E6-VB TO247 MOSFET in high voltage and high current applications.
6R190E6-VB TO247 MOSFET is suitable for the following fields and modules:
- **Power converter:** In power converters, this MOSFET can be used in high-efficiency DC-DC converters and AC-DC rectifiers. Due to its low on-resistance and high withstand voltage characteristics, it can effectively reduce power losses and improve conversion efficiency.
- **Industrial drive:** In industrial motor drive and control systems, this device can provide stable switching characteristics and fast switching speeds, suitable for various industrial automation and power tool drives.
- **Electric vehicle charger:** Used as a switching device in electric vehicle chargers to ensure an efficient charging process and provide the necessary current and voltage regulation.
These examples show the versatility and applicability of the 6R190E6-VB TO247 MOSFET in high voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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