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6R190C6-VB TO247 Product details
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1. 6R190C6-VB Product Introduction
6R190C6-VB is a single N-channel MOSFET produced by VBsemi using super junction multi-epitaxial (SJ_Multi-EPI) technology. This device is designed for high voltage applications, has good conduction characteristics and high reliability, and is suitable for power electronic systems that require high performance and long life.
6R190C6-VB is a single N-channel MOSFET produced by VBsemi using super junction multi-epitaxial (SJ_Multi-EPI) technology. This device is designed for high voltage applications, has good conduction characteristics and high reliability, and is suitable for power electronic systems that require high performance and long life.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. 6R190C6-VB detailed parameter description
- **Package form**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package form**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
III. Application Fields and Module Examples
1. **Electric Vehicle Chargers**: 6R190C6-VB has important applications in electric vehicle charging equipment. Its high voltage withstand capability and moderate on-resistance characteristics make it an ideal choice for charger switch circuits, ensuring a fast, safe and efficient charging process.
2. **Industrial Power Systems**: In industrial power systems, this MOSFET can be used for power switch control in industrial power supplies, motor drives and power distribution units. Its high reliability and stable performance ensure long-term stable operation under high voltage and high power environments.
3. **Solar Power Inverters**: 6R190C6-VB can be used for power switches and voltage regulator units in solar inverters. Its excellent electrical characteristics and high efficiency can effectively improve the energy conversion efficiency of solar systems and ensure the reliability of the system under various lighting conditions.
4. **Medical Equipment**: In medical equipment that requires high reliability and stability, especially X-ray equipment and electrotherapy equipment, this MOSFET can be used in power control circuits to ensure the safety and reliability of the equipment during long-term operation.
Through the above examples, we can see that 6R190C6-VB MOSFET is widely used in multiple fields and modules. Its superior electrical performance and adaptability make it an important component in various high-voltage, high-power power electronic systems.
1. **Electric Vehicle Chargers**: 6R190C6-VB has important applications in electric vehicle charging equipment. Its high voltage withstand capability and moderate on-resistance characteristics make it an ideal choice for charger switch circuits, ensuring a fast, safe and efficient charging process.
2. **Industrial Power Systems**: In industrial power systems, this MOSFET can be used for power switch control in industrial power supplies, motor drives and power distribution units. Its high reliability and stable performance ensure long-term stable operation under high voltage and high power environments.
3. **Solar Power Inverters**: 6R190C6-VB can be used for power switches and voltage regulator units in solar inverters. Its excellent electrical characteristics and high efficiency can effectively improve the energy conversion efficiency of solar systems and ensure the reliability of the system under various lighting conditions.
4. **Medical Equipment**: In medical equipment that requires high reliability and stability, especially X-ray equipment and electrotherapy equipment, this MOSFET can be used in power control circuits to ensure the safety and reliability of the equipment during long-term operation.
Through the above examples, we can see that 6R190C6-VB MOSFET is widely used in multiple fields and modules. Its superior electrical performance and adaptability make it an important component in various high-voltage, high-power power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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