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6R160C6-VB TO247 Product details
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6R160C6-VB TO247 MOSFET Product Overview
**Product Introduction Details:**
The 6R160C6-VB is a single N-channel MOSFET in a TO247 package. This MOSFET is designed for high voltage, high current applications, providing excellent power switching performance and reliability. It has a drain-source voltage (VDS) rating of 650V and a gate-source voltage (VGS) tolerance of ±30V. The threshold voltage (Vth) is 3.5V, suitable for a wide range of industrial and commercial applications. At a VGS of 10V, its on-resistance RDS(on) is 75mΩ, ensuring low conduction losses. The device can continuously withstand a drain current (ID) of up to 47A and uses SJ_Multi-EPI technology, combining the advantages of polysilicon and epitaxial transistor technology.
**Product Introduction Details:**
The 6R160C6-VB is a single N-channel MOSFET in a TO247 package. This MOSFET is designed for high voltage, high current applications, providing excellent power switching performance and reliability. It has a drain-source voltage (VDS) rating of 650V and a gate-source voltage (VGS) tolerance of ±30V. The threshold voltage (Vth) is 3.5V, suitable for a wide range of industrial and commercial applications. At a VGS of 10V, its on-resistance RDS(on) is 75mΩ, ensuring low conduction losses. The device can continuously withstand a drain current (ID) of up to 47A and uses SJ_Multi-EPI technology, combining the advantages of polysilicon and epitaxial transistor technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
6R160C6-VB TO247 MOSFET Detailed parameter description
**Detailed parameters:**
- **Device configuration:** Single N-channel
- **Package type:** TO247
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **Drain-source on-resistance (RDS(on)):**
- At VGS = 10V: 75mΩ
- **Continuous drain current (ID):** 47A
- **Technical features:** SJ_Multi-EPI (polysilicon epitaxial transistor technology)
**Detailed parameters:**
- **Device configuration:** Single N-channel
- **Package type:** TO247
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **Drain-source on-resistance (RDS(on)):**
- At VGS = 10V: 75mΩ
- **Continuous drain current (ID):** 47A
- **Technical features:** SJ_Multi-EPI (polysilicon epitaxial transistor technology)
Domain and module applications：
Application fields and module examples
**Application fields and modules: **
6R160C6-VB TO247 MOSFET is suitable for a variety of fields and modules, including:
1. **Industrial power electronics: **
- Used in switching power supplies, inverters and frequency converters in industrial power systems, supporting high-efficiency and high-power power conversion.
2. **Electric vehicle chargers: **
- Used in electric vehicle charging piles and fast charging equipment, supporting high current charging and power conversion efficiency.
3. **Solar inverters: **
- Realize efficient DC-AC conversion in solar power generation systems, supporting the stable operation of solar power stations and household solar systems.
4. **Power transmission and distribution: **
- Used for power switching and control in power transmission and distribution systems to ensure grid stability and energy efficiency.
5. **Medical Equipment:**
- Used in power management and control of medical equipment, such as high-frequency electrotherapy equipment and imaging diagnostic equipment.
6. **Power Tools and Home Appliances:**
- Power control and motor drive in high-power power tools and home appliances to ensure high efficiency and reliability.
By applying 6R160C6-VB TO247 MOSFET to these fields and modules, designers can achieve higher performance, reliability and energy efficiency, meet the needs of complex electronic systems, and promote the application and development of technology in high-power applications.
**Application fields and modules: **
6R160C6-VB TO247 MOSFET is suitable for a variety of fields and modules, including:
1. **Industrial power electronics: **
- Used in switching power supplies, inverters and frequency converters in industrial power systems, supporting high-efficiency and high-power power conversion.
2. **Electric vehicle chargers: **
- Used in electric vehicle charging piles and fast charging equipment, supporting high current charging and power conversion efficiency.
3. **Solar inverters: **
- Realize efficient DC-AC conversion in solar power generation systems, supporting the stable operation of solar power stations and household solar systems.
4. **Power transmission and distribution: **
- Used for power switching and control in power transmission and distribution systems to ensure grid stability and energy efficiency.
5. **Medical Equipment:**
- Used in power management and control of medical equipment, such as high-frequency electrotherapy equipment and imaging diagnostic equipment.
6. **Power Tools and Home Appliances:**
- Power control and motor drive in high-power power tools and home appliances to ensure high efficiency and reliability.
By applying 6R160C6-VB TO247 MOSFET to these fields and modules, designers can achieve higher performance, reliability and energy efficiency, meet the needs of complex electronic systems, and promote the application and development of technology in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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