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6R125C6-VB TO247 Product details
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1. 6R125C6-VB Product Introduction
6R125C6-VB is a single N-channel MOSFET that uses VBsemi's super junction multi-epitaxial (SJ_Multi-EPI) technology. The device is designed for high voltage and high power applications, with low on-resistance and high drain current capability, suitable for power electronic systems that require high performance and high reliability.
6R125C6-VB is a single N-channel MOSFET that uses VBsemi's super junction multi-epitaxial (SJ_Multi-EPI) technology. The device is designed for high voltage and high power applications, with low on-resistance and high drain current capability, suitable for power electronic systems that require high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description of 6R125C6-VB
- **Package form**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package form**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
III. Application Fields and Module Examples
1. **Electric Vehicles**: In the motor control system of electric vehicles, 6R125C6-VB can be used for the battery management system (BMS) and motor control unit (MCU) of electric vehicles. Its high drain current capability and low on-resistance characteristics ensure the excellent performance of the system in high-power drive and fast response.
2. **Industrial High-Frequency Power Supplies**: In industrial high-frequency power supply systems, this MOSFET is capable of handling high-frequency switching operations and is used for power switch control in industrial furnaces, high-frequency welding equipment, and induction heating systems. Its low on-resistance and high efficiency make it an ideal choice for these systems.
3. **Solar Power Inverters**: 6R125C6-VB can be used for power switches and voltage control units in solar inverters. Its high voltage tolerance and stable performance ensure long-term reliable operation in solar systems and improve energy conversion efficiency.
4. **Power Distribution Units**: In power distribution units and power management systems, this MOSFET can be used for power switch control and power regulation. Its high reliability and durability make it suitable for power distribution and management applications in industrial, commercial and residential buildings.
Through the above application examples, we can see that 6R125C6-VB MOSFET is widely used in multiple fields and modules. Its superior electrical performance and adaptability make it an important component in various high-voltage, high-power power electronic systems.
1. **Electric Vehicles**: In the motor control system of electric vehicles, 6R125C6-VB can be used for the battery management system (BMS) and motor control unit (MCU) of electric vehicles. Its high drain current capability and low on-resistance characteristics ensure the excellent performance of the system in high-power drive and fast response.
2. **Industrial High-Frequency Power Supplies**: In industrial high-frequency power supply systems, this MOSFET is capable of handling high-frequency switching operations and is used for power switch control in industrial furnaces, high-frequency welding equipment, and induction heating systems. Its low on-resistance and high efficiency make it an ideal choice for these systems.
3. **Solar Power Inverters**: 6R125C6-VB can be used for power switches and voltage control units in solar inverters. Its high voltage tolerance and stable performance ensure long-term reliable operation in solar systems and improve energy conversion efficiency.
4. **Power Distribution Units**: In power distribution units and power management systems, this MOSFET can be used for power switch control and power regulation. Its high reliability and durability make it suitable for power distribution and management applications in industrial, commercial and residential buildings.
Through the above application examples, we can see that 6R125C6-VB MOSFET is widely used in multiple fields and modules. Its superior electrical performance and adaptability make it an important component in various high-voltage, high-power power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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