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6N65L-TM3-T-VB Product details
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1. 6N65L-TM3-T-VB Product Introduction
6N65L-TM3-T-VB is a single N-channel MOSFET launched by VBsemi, using advanced super junction multi-epitaxial (SJ_Multi-EPI) technology. It has high voltage, low on-resistance and high current handling capabilities, making it very suitable for various power electronics applications. Its compact TO251 package not only helps dissipate heat, but also effectively reduces space occupancy and improves the flexibility and reliability of circuit design.
6N65L-TM3-T-VB is a single N-channel MOSFET launched by VBsemi, using advanced super junction multi-epitaxial (SJ_Multi-EPI) technology. It has high voltage, low on-resistance and high current handling capabilities, making it very suitable for various power electronics applications. Its compact TO251 package not only helps dissipate heat, but also effectively reduces space occupancy and improves the flexibility and reliability of circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. 6N65L-TM3-T-VB detailed parameter description
- **Package form**: TO251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package form**: TO251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Applications and module examples
1. **Switching Power Supplies**: 6N65L-TM3-T-VB is very suitable for various switching power supply applications, such as computer power supply, communication power supply and household appliance power supply. Its high voltage and low on-resistance characteristics ensure low losses during high-efficiency conversion and improve the overall efficiency of the system.
2. **Power Tools**: In power tools, this MOSFET is able to handle high currents, ensuring the reliability and performance of the equipment during operation. Its high voltage withstand capability makes it perform well in the switching circuits of power tools, providing a stable power supply.
3. **Uninterruptible Power Supply (UPS)**: 6N65L-TM3-T-VB can also play an important role in uninterruptible power supply systems. Its high efficiency and high reliability make it a key component in these systems, ensuring rapid response and continuous power supply when power is interrupted.
4. **Lighting Control Systems**: In modern lighting systems, this MOSFET can be used in efficient LED driver circuits and lighting dimmers to provide stable power management and control capabilities and extend the service life of lighting equipment.
Through the above application examples, we can see the wide application and importance of 6N65L-TM3-T-VB MOSFET in different fields and modules. Its excellent electrical characteristics and high efficiency make it an ideal choice for various power electronic devices.
1. **Switching Power Supplies**: 6N65L-TM3-T-VB is very suitable for various switching power supply applications, such as computer power supply, communication power supply and household appliance power supply. Its high voltage and low on-resistance characteristics ensure low losses during high-efficiency conversion and improve the overall efficiency of the system.
2. **Power Tools**: In power tools, this MOSFET is able to handle high currents, ensuring the reliability and performance of the equipment during operation. Its high voltage withstand capability makes it perform well in the switching circuits of power tools, providing a stable power supply.
3. **Uninterruptible Power Supply (UPS)**: 6N65L-TM3-T-VB can also play an important role in uninterruptible power supply systems. Its high efficiency and high reliability make it a key component in these systems, ensuring rapid response and continuous power supply when power is interrupted.
4. **Lighting Control Systems**: In modern lighting systems, this MOSFET can be used in efficient LED driver circuits and lighting dimmers to provide stable power management and control capabilities and extend the service life of lighting equipment.
Through the above application examples, we can see the wide application and importance of 6N65L-TM3-T-VB MOSFET in different fields and modules. Its excellent electrical characteristics and high efficiency make it an ideal choice for various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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