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6N62K3-VB TO251 Product details
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Product Introduction Details
**Model**: 6N62K3-VB TO251
6N62K3-VB is a single N-channel enhancement-mode power MOSFET in TO251 package. It has high withstand voltage and low on-resistance, suitable for various high-efficiency power management applications. This MOSFET adopts advanced SJ_Multi-EPI technology to ensure stable performance and low conduction loss under high voltage conditions.
**Model**: 6N62K3-VB TO251
6N62K3-VB is a single N-channel enhancement-mode power MOSFET in TO251 package. It has high withstand voltage and low on-resistance, suitable for various high-efficiency power management applications. This MOSFET adopts advanced SJ_Multi-EPI technology to ensure stable performance and low conduction loss under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
6N62K3-VB MOSFET has a wide range of applications in multiple fields and modules. Its high voltage and high current capabilities make it very suitable for the following scenarios:
1. **Switching Power Supply (SMPS)**:
- In switching power supplies, the high withstand voltage characteristics and low on-resistance of 6N62K3-VB can significantly improve power conversion efficiency, reduce energy loss, and provide stable performance under high-frequency operating conditions.
- For example, it is suitable for power management of server power supplies, industrial power supplies, and efficient home appliances.
2. **Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Power Management**:
- The high current and high voltage withstand characteristics of 6N62K3-VB are very suitable for power management systems such as DC-DC converters and battery management systems in electric vehicles and hybrid vehicles.
- It can provide stable power transmission and management in harsh automotive working environments.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as inverters and servo motor drives, the performance of 6N62K3-VB can ensure efficient operation of the equipment, reduce energy consumption and extend the life of the equipment.
- Its high voltage resistance is particularly suitable for industrial applications that require high voltage drive.
4. **Solar Photovoltaic Inverter**:
- In solar photovoltaic inverters, 6N62K3-VB can effectively convert DC to AC and maintain efficient power conversion under high voltage conditions.
- Improve the efficiency of the overall solar system and reduce power loss.
Through these application examples, it can be seen that 6N62K3-VB is a high-performance MOSFET with wide adaptability, which has important applications in the fields of high-efficiency power management and high-voltage drive.
6N62K3-VB MOSFET has a wide range of applications in multiple fields and modules. Its high voltage and high current capabilities make it very suitable for the following scenarios:
1. **Switching Power Supply (SMPS)**:
- In switching power supplies, the high withstand voltage characteristics and low on-resistance of 6N62K3-VB can significantly improve power conversion efficiency, reduce energy loss, and provide stable performance under high-frequency operating conditions.
- For example, it is suitable for power management of server power supplies, industrial power supplies, and efficient home appliances.
2. **Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Power Management**:
- The high current and high voltage withstand characteristics of 6N62K3-VB are very suitable for power management systems such as DC-DC converters and battery management systems in electric vehicles and hybrid vehicles.
- It can provide stable power transmission and management in harsh automotive working environments.
3. **Industrial Automation Equipment**:
- In industrial automation equipment, such as inverters and servo motor drives, the performance of 6N62K3-VB can ensure efficient operation of the equipment, reduce energy consumption and extend the life of the equipment.
- Its high voltage resistance is particularly suitable for industrial applications that require high voltage drive.
4. **Solar Photovoltaic Inverter**:
- In solar photovoltaic inverters, 6N62K3-VB can effectively convert DC to AC and maintain efficient power conversion under high voltage conditions.
- Improve the efficiency of the overall solar system and reduce power loss.
Through these application examples, it can be seen that 6N62K3-VB is a high-performance MOSFET with wide adaptability, which has important applications in the fields of high-efficiency power management and high-voltage drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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