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6N60Z-VB Product details
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1. Product Introduction
VBsemi 6N60Z-VB is a single N-channel field effect transistor, mainly designed for high voltage applications. It has a drain-source voltage (VDS) of up to 650V, suitable for circuit designs that require stable voltage and reliability. It is manufactured using planar process technology, ensuring its stable performance and high reliability.
VBsemi 6N60Z-VB is a single N-channel field effect transistor, mainly designed for high voltage applications. It has a drain-source voltage (VDS) of up to 650V, suitable for circuit designs that require stable voltage and reliability. It is manufactured using planar process technology, ensuring its stable performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Parameter description
- **Model**: 6N60Z-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (Drain-Source Voltage)**: 650V
- **VGS (Gate-Source Voltage)**: ±30V
- **Vth (Threshold Voltage)**: 3.5V
- **RDS(ON) (On-Resistance)**: 1100mΩ @ VGS = 10V
- **ID (Drain Current)**: 7A
- **Technology**: Planar process
- **Model**: 6N60Z-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS (Drain-Source Voltage)**: 650V
- **VGS (Gate-Source Voltage)**: ±30V
- **Vth (Threshold Voltage)**: 3.5V
- **RDS(ON) (On-Resistance)**: 1100mΩ @ VGS = 10V
- **ID (Drain Current)**: 7A
- **Technology**: Planar process
Domain and module applications：
3. Application Examples
6N60Z-VB is suitable for the following fields and modules:
- **Power Supply**: In power converters that require high stability and high efficiency, 6N60Z-VB can be used as the main switch to achieve high voltage conversion.
- **Lighting**: Due to its high drain-source voltage and moderate drain current capability, this MOSFET can be used in LED drive circuits to provide reliable power control.
- **Industrial Control**: In industrial motor control and high-voltage circuits, 6N60Z-VB can be used as a switching device to achieve high efficiency and long-term stability.
- **Electric Vehicle Charger**: Suitable for use in the switching power supply part of electric vehicle chargers to ensure high efficiency and safe charging process.
These examples illustrate the flexibility and applicability of 6N60Z-VB in a variety of application scenarios, making it an ideal choice in high-voltage circuit design.
6N60Z-VB is suitable for the following fields and modules:
- **Power Supply**: In power converters that require high stability and high efficiency, 6N60Z-VB can be used as the main switch to achieve high voltage conversion.
- **Lighting**: Due to its high drain-source voltage and moderate drain current capability, this MOSFET can be used in LED drive circuits to provide reliable power control.
- **Industrial Control**: In industrial motor control and high-voltage circuits, 6N60Z-VB can be used as a switching device to achieve high efficiency and long-term stability.
- **Electric Vehicle Charger**: Suitable for use in the switching power supply part of electric vehicle chargers to ensure high efficiency and safe charging process.
These examples illustrate the flexibility and applicability of 6N60Z-VB in a variety of application scenarios, making it an ideal choice in high-voltage circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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