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6800GEO-VB Product details
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Product Introduction
**Model:** 6800GEO-VB
**Package:** TSSOP8
**Configuration:** Common-gate-N+N-channel
**VDS:** 20V
**VGS:** 20（±V）
**Vth:** 0.5~1.5V
**RDS(ON):** 32mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V
**ID:** 6.6A
**Technology:** Trench
6800GEO-VB is a power MOSFET integrating a common-gate-N+N-channel structure, suitable for low-voltage and medium-power applications. Its TSSOP8 package has a small footprint, suitable for electronic devices that require compactness and high integration.
**Model:** 6800GEO-VB
**Package:** TSSOP8
**Configuration:** Common-gate-N+N-channel
**VDS:** 20V
**VGS:** 20（±V）
**Vth:** 0.5~1.5V
**RDS(ON):** 32mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V
**ID:** 6.6A
**Technology:** Trench
6800GEO-VB is a power MOSFET integrating a common-gate-N+N-channel structure, suitable for low-voltage and medium-power applications. Its TSSOP8 package has a small footprint, suitable for electronic devices that require compactness and high integration.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
| Parameter| Value|
|-------------------|-------------------|
| Model| 6800GEO-VB |
| Package| TSSOP8 |
| Configuration| Common-gate-N+N-channel|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage range (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 32mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V |
| Maximum drain current (ID) | 6.6A |
| Technology| Trench |
| Parameter| Value|
|-------------------|-------------------|
| Model| 6800GEO-VB |
| Package| TSSOP8 |
| Configuration| Common-gate-N+N-channel|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage range (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 32mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V |
| Maximum drain current (ID) | 6.6A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
1. **Power Management: **
6800GEO-VB is suitable for low-voltage power management, such as power conversion and battery management modules for smartphones, tablets and portable consumer electronics. Its low on-resistance and high efficiency characteristics help extend battery life.
2. **Wearable Devices: **
In small and low-power wearable devices, this type of MOSFET can be used for power management and signal processing circuits to support stable operation and long-term use of the device.
3. **Industrial Control: **
In industrial automation and control systems, 6800GEO-VB can be used as a motor driver and power switch to ensure efficient operation and precise control of the device.
4. **Automotive Electronics: **
Due to its small size and reliability, this type of MOSFET can be used for low-voltage power switching and control in automotive electronic control units (ECUs), supporting efficient power supply of electronic devices inside the vehicle.
5. **Communication Devices: **
In communication infrastructure and network equipment, the 6800GEO-VB can provide stable power management and power conversion to ensure continuous performance and reliability of the equipment.
The above examples show the application potential of the 6800GEO-VB in power management, wearable devices, industrial control, automotive electronics and communication equipment. Its superior electrical performance and packaging characteristics make it suitable for a variety of low- and medium-power electronic applications.
1. **Power Management: **
6800GEO-VB is suitable for low-voltage power management, such as power conversion and battery management modules for smartphones, tablets and portable consumer electronics. Its low on-resistance and high efficiency characteristics help extend battery life.
2. **Wearable Devices: **
In small and low-power wearable devices, this type of MOSFET can be used for power management and signal processing circuits to support stable operation and long-term use of the device.
3. **Industrial Control: **
In industrial automation and control systems, 6800GEO-VB can be used as a motor driver and power switch to ensure efficient operation and precise control of the device.
4. **Automotive Electronics: **
Due to its small size and reliability, this type of MOSFET can be used for low-voltage power switching and control in automotive electronic control units (ECUs), supporting efficient power supply of electronic devices inside the vehicle.
5. **Communication Devices: **
In communication infrastructure and network equipment, the 6800GEO-VB can provide stable power management and power conversion to ensure continuous performance and reliability of the equipment.
The above examples show the application potential of the 6800GEO-VB in power management, wearable devices, industrial control, automotive electronics and communication equipment. Its superior electrical performance and packaging characteristics make it suitable for a variety of low- and medium-power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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