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65C660-VB TO220F Product details
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Product Introduction
**65C660-VB** is a single N-channel power MOSFET in TO220F package, suitable for high voltage applications. With a breakdown voltage of 700V and a continuous drain current capability of 10A, it uses SJ_Multi-EPI technology to achieve low on-resistance and good thermal characteristics, suitable for electronic equipment and systems requiring high voltage and stability.
**65C660-VB** is a single N-channel power MOSFET in TO220F package, suitable for high voltage applications. With a breakdown voltage of 700V and a continuous drain current capability of 10A, it uses SJ_Multi-EPI technology to achieve low on-resistance and good thermal characteristics, suitable for electronic equipment and systems requiring high voltage and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | 390(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 65C660-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 700V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
- **Model**: 65C660-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 700V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Power Inverters**:
- 65C660-VB can be used in high-voltage inverters to convert DC to AC, such as in solar inverters and industrial UPS systems, to provide reliable energy conversion and power stability.
2. **Electric Vehicle Charging Equipment**:
- As a switching element in electric vehicle charging piles, it supports high voltage and current management to ensure efficient and fast charging of electric vehicles.
3. **Industrial Automation**:
- In industrial control systems, 65C660-VB can be used for power management and motor control, providing efficient energy management and power control capabilities.
4. **Power Management Modules**:
- Provides stable power output and efficiency management in various power management modules, especially in applications that need to handle high voltage and high current, such as industrial power supplies and power electronic equipment.
5. **Medical Equipment**:
- In medical equipment, especially imaging systems and electronic therapeutic equipment that require high voltage and high power, this MOSFET can provide reliable power control and stable performance.
In summary, the 65C660-VB is a single N-channel MOSFET suitable for high voltage and high current requirements. Through its excellent performance characteristics and thermal management capabilities, it is widely used in power inverters, electric vehicle charging equipment, industrial automation, power management modules and medical equipment, providing efficient and stable solutions for various applications.
1. **Power Inverters**:
- 65C660-VB can be used in high-voltage inverters to convert DC to AC, such as in solar inverters and industrial UPS systems, to provide reliable energy conversion and power stability.
2. **Electric Vehicle Charging Equipment**:
- As a switching element in electric vehicle charging piles, it supports high voltage and current management to ensure efficient and fast charging of electric vehicles.
3. **Industrial Automation**:
- In industrial control systems, 65C660-VB can be used for power management and motor control, providing efficient energy management and power control capabilities.
4. **Power Management Modules**:
- Provides stable power output and efficiency management in various power management modules, especially in applications that need to handle high voltage and high current, such as industrial power supplies and power electronic equipment.
5. **Medical Equipment**:
- In medical equipment, especially imaging systems and electronic therapeutic equipment that require high voltage and high power, this MOSFET can provide reliable power control and stable performance.
In summary, the 65C660-VB is a single N-channel MOSFET suitable for high voltage and high current requirements. Through its excellent performance characteristics and thermal management capabilities, it is widely used in power inverters, electric vehicle charging equipment, industrial automation, power management modules and medical equipment, providing efficient and stable solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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