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638Z-VB Product details
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Product Introduction
**Model:** 638Z-VB
**Package:** SOT23-6
**Configuration:** Single P-channel
**VDS:** -30V
**VGS:** 20（±V）
**Vth:** -1.7V
**RDS(ON):**
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
**ID:** -4.8A
**Technology:** Trench
638Z-VB is a single P-channel MOSFET in a small SOT23-6 package, suitable for low-power circuits and portable devices. Its features include -30V drain-source voltage (VDS), 20V gate-source voltage (VGS), and -1.7V threshold voltage (Vth). It has excellent conduction characteristics, with RDS(ON) of 54mΩ (at VGS=4.5V) and 49mΩ (at VGS=10V) under different working conditions, and supports a maximum drain current (ID) of -4.8A. The use of Trench technology ensures efficient energy conversion and stable performance.
**Model:** 638Z-VB
**Package:** SOT23-6
**Configuration:** Single P-channel
**VDS:** -30V
**VGS:** 20（±V）
**Vth:** -1.7V
**RDS(ON):**
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
**ID:** -4.8A
**Technology:** Trench
638Z-VB is a single P-channel MOSFET in a small SOT23-6 package, suitable for low-power circuits and portable devices. Its features include -30V drain-source voltage (VDS), 20V gate-source voltage (VGS), and -1.7V threshold voltage (Vth). It has excellent conduction characteristics, with RDS(ON) of 54mΩ (at VGS=4.5V) and 49mΩ (at VGS=10V) under different working conditions, and supports a maximum drain current (ID) of -4.8A. The use of Trench technology ensures efficient energy conversion and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 54(mΩ) | 49(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
| Parameter| Value|
|-------------------|-----------|
| Model| 638Z-VB |
| Package| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V, 49mΩ @ VGS=10V |
| Maximum drain current (ID) | -4.8A |
| Technology| Trench |
| Parameter| Value|
|-------------------|-----------|
| Model| 638Z-VB |
| Package| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V, 49mΩ @ VGS=10V |
| Maximum drain current (ID) | -4.8A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
1. **Portable Electronics:**
638Z-VB is suitable for power management and signal switching circuits in portable devices, such as smartphones, tablets, portable audio devices, etc. Its small package and low power consumption enable it to effectively extend battery life and improve device operation efficiency.
2. **Low-Power Power Supplies:**
In low-power power supplies that require efficient energy conversion and compact design, 638Z-VB can be used as a key component of power switches and DC-DC converters to achieve efficient energy conversion and stable power output.
3. **Signal Switching:**
In the signal switching circuits of various electronic devices, this MOSFET can be used as a signal router and switch controller to ensure high speed and stability of signal transmission.
Through the above examples, 638Z-VB demonstrates its wide application in multiple fields such as portable electronic devices, low-power power supplies and signal switches, providing high performance and reliability guarantees for circuit design.
1. **Portable Electronics:**
638Z-VB is suitable for power management and signal switching circuits in portable devices, such as smartphones, tablets, portable audio devices, etc. Its small package and low power consumption enable it to effectively extend battery life and improve device operation efficiency.
2. **Low-Power Power Supplies:**
In low-power power supplies that require efficient energy conversion and compact design, 638Z-VB can be used as a key component of power switches and DC-DC converters to achieve efficient energy conversion and stable power output.
3. **Signal Switching:**
In the signal switching circuits of various electronic devices, this MOSFET can be used as a signal router and switch controller to ensure high speed and stability of signal transmission.
Through the above examples, 638Z-VB demonstrates its wide application in multiple fields such as portable electronic devices, low-power power supplies and signal switches, providing high performance and reliability guarantees for circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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