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60N745U2G-VB Product details
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Product Introduction
**60N900U1G-VB** is a single N-channel power MOSFET in TO252 package, suitable for medium and high voltage applications. With a breakdown voltage of 650V and a continuous drain current capability of up to 7A, it adopts SJ_Multi-EPI technology to provide reliable electrical characteristics and performance stability, suitable for applications requiring medium power and efficient energy management.
**60N900U1G-VB** is a single N-channel power MOSFET in TO252 package, suitable for medium and high voltage applications. With a breakdown voltage of 650V and a continuous drain current capability of up to 7A, it adopts SJ_Multi-EPI technology to provide reliable electrical characteristics and performance stability, suitable for applications requiring medium power and efficient energy management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: 60N900U1G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: 60N900U1G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power Converters**:
- 60N900U1G-VB can be used as a switching device in medium and high voltage power converters, such as DC-DC converters and inverters, to ensure efficient energy management and stable power output.
2. **Industrial Control**:
- In industrial automation and control systems, this MOSFET is suitable for motor control, power management and power switching applications of various industrial equipment to ensure stable operation and long-term reliability of the equipment.
3. **Electric Vehicle Charging Stations**:
- As a power switching element in electric vehicle charging stations, it can handle high voltage and current, supporting fast charging and energy conversion of electric vehicles.
4. **Solar Inverters**:
- In the inverter of a solar power generation system, this MOSFET can help achieve efficient energy conversion from solar panels to the grid, improving the energy utilization of the solar system.
5. **LED Drivers**:
- In LED lighting systems, 60N900U1G-VB can be used as a driver for high-power LED lamps to ensure stable brightness and long life of LEDs.
In summary, 60N900U1G-VB is a single N-channel MOSFET suitable for medium-high voltage and medium current applications. It is widely used in industrial control, power conversion, electric vehicle charging piles, and LED lighting, providing reliable power management solutions for various electronic devices and systems.
1. **Power Converters**:
- 60N900U1G-VB can be used as a switching device in medium and high voltage power converters, such as DC-DC converters and inverters, to ensure efficient energy management and stable power output.
2. **Industrial Control**:
- In industrial automation and control systems, this MOSFET is suitable for motor control, power management and power switching applications of various industrial equipment to ensure stable operation and long-term reliability of the equipment.
3. **Electric Vehicle Charging Stations**:
- As a power switching element in electric vehicle charging stations, it can handle high voltage and current, supporting fast charging and energy conversion of electric vehicles.
4. **Solar Inverters**:
- In the inverter of a solar power generation system, this MOSFET can help achieve efficient energy conversion from solar panels to the grid, improving the energy utilization of the solar system.
5. **LED Drivers**:
- In LED lighting systems, 60N900U1G-VB can be used as a driver for high-power LED lamps to ensure stable brightness and long life of LEDs.
In summary, 60N900U1G-VB is a single N-channel MOSFET suitable for medium-high voltage and medium current applications. It is widely used in industrial control, power conversion, electric vehicle charging piles, and LED lighting, providing reliable power management solutions for various electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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