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60N55F3-VB TO251 Product details
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Product Introduction
**Model:** 60N55F3-VB
**Package:** TO251
**Configuration:** Single N-channel
**VDS:** 60V
**VGS:** 20（±V）
**Vth:** 2.5V
**RDS(ON):**
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
**ID:** 97A
**Technology:** Trench
60N55F3-VB is a single N-channel MOSFET in TO251 package for high power applications. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 2.5V. Its on-resistance (RDS(ON)) is 6mΩ (at VGS=4.5V) and 5mΩ (at VGS=10V) at different gate-source voltages, and the maximum continuous drain current (ID) is 97A. The design using Trench technology can provide excellent conduction characteristics and efficient power management capabilities.
**Model:** 60N55F3-VB
**Package:** TO251
**Configuration:** Single N-channel
**VDS:** 60V
**VGS:** 20（±V）
**Vth:** 2.5V
**RDS(ON):**
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
**ID:** 97A
**Technology:** Trench
60N55F3-VB is a single N-channel MOSFET in TO251 package for high power applications. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 2.5V. Its on-resistance (RDS(ON)) is 6mΩ (at VGS=4.5V) and 5mΩ (at VGS=10V) at different gate-source voltages, and the maximum continuous drain current (ID) is 97A. The design using Trench technology can provide excellent conduction characteristics and efficient power management capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameter| Value|
|-------------------|-----------|
| Model| 60N55F3-VB |
| Package| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V |
| Maximum continuous drain current (ID) | 97A |
| Technology| Trench |
| Parameter| Value|
|-------------------|-----------|
| Model| 60N55F3-VB |
| Package| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | 20 (±V) |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V |
| Maximum continuous drain current (ID) | 97A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
1. **Power Modules:**
60N55F3-VB MOSFET is suitable for power switching circuits in various types of high-power power modules. Its extremely low on-resistance and high current carrying capacity enable it to effectively handle high power conversion and stable power output requirements.
2. **Power Tools and Electric Vehicles:**
In power tools and electric vehicles that need to handle high power and high current, this MOSFET can be used as a key power switching component. Its excellent electrical performance and stable operating characteristics help improve the power density and operating efficiency of the equipment.
3. **Power Management Units:**
In applications that require efficient energy management and stable voltage output, such as power management units and motor controllers, 60N55F3-VB MOSFET can provide reliable power switch control and power management.
4. **Servers and Data Centers: **
When efficient power conversion and stable power supply are required, this MOSFET can be used in the power management unit of servers and data centers to ensure the stability and energy efficiency of the system.
Through the above examples, 60N55F3-VB MOSFET demonstrates its superior performance in high-power, high-current and efficient energy management application scenarios, and is suitable for key circuit designs in multiple fields such as power modules, power tools, electric vehicles, power management units and data centers.
1. **Power Modules:**
60N55F3-VB MOSFET is suitable for power switching circuits in various types of high-power power modules. Its extremely low on-resistance and high current carrying capacity enable it to effectively handle high power conversion and stable power output requirements.
2. **Power Tools and Electric Vehicles:**
In power tools and electric vehicles that need to handle high power and high current, this MOSFET can be used as a key power switching component. Its excellent electrical performance and stable operating characteristics help improve the power density and operating efficiency of the equipment.
3. **Power Management Units:**
In applications that require efficient energy management and stable voltage output, such as power management units and motor controllers, 60N55F3-VB MOSFET can provide reliable power switch control and power management.
4. **Servers and Data Centers: **
When efficient power conversion and stable power supply are required, this MOSFET can be used in the power management unit of servers and data centers to ensure the stability and energy efficiency of the system.
Through the above examples, 60N55F3-VB MOSFET demonstrates its superior performance in high-power, high-current and efficient energy management application scenarios, and is suitable for key circuit designs in multiple fields such as power modules, power tools, electric vehicles, power management units and data centers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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