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60N03GJ-VB Product details
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1. 60N03GJ-VB Product Introduction
60N03GJ-VB is a high-performance single N-channel MOSFET produced by VBsemi and packaged in TO251. The device is designed for low voltage applications and has a drain-source voltage of 30V and a maximum drain current capability of up to 100A. It uses Trench technology to provide low on-resistance and high efficiency, and is suitable for applications requiring high power density and high efficiency.
60N03GJ-VB is a high-performance single N-channel MOSFET produced by VBsemi and packaged in TO251. The device is designed for low voltage applications and has a drain-source voltage of 30V and a maximum drain current capability of up to 100A. It uses Trench technology to provide low on-resistance and high efficiency, and is suitable for applications requiring high power density and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 4.5(mΩ) | 3.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of 60N03GJ-VB
| Parameter | Value | Remarks |
| --- | --- | --- |
| **Package type** | TO251 | Typical three-pin package|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V | Suitable for low voltage applications|
| **VGS (gate-source voltage)** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | 1.7V | Gate-source turn-on voltage|
| **RDS(ON) @ VGS=4.5V** | 4.5mΩ | On-resistance|
| **RDS(ON) @ VGS=10V** | 3.5mΩ | On-resistance|
| **ID (drain current)** | 100A | Maximum continuous current |
| **Technology** | Trench | Trench structure provides low on-resistance and high performance |
| Parameter | Value | Remarks |
| --- | --- | --- |
| **Package type** | TO251 | Typical three-pin package|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V | Suitable for low voltage applications|
| **VGS (gate-source voltage)** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | 1.7V | Gate-source turn-on voltage|
| **RDS(ON) @ VGS=4.5V** | 4.5mΩ | On-resistance|
| **RDS(ON) @ VGS=10V** | 3.5mΩ | On-resistance|
| **ID (drain current)** | 100A | Maximum continuous current |
| **Technology** | Trench | Trench structure provides low on-resistance and high performance |
Domain and module applications：
3. Application fields and modules of 60N03GJ-VB
60N03GJ-VB is suitable for a variety of low-voltage, high-power application scenarios:
1. **Motor drive**
-**Application scenario**: Applicable to motor drive modules in power tools and electric vehicles.
-**Example**: In the motor drive system of power tools, 60N03GJ-VB can provide efficient power conversion and fast motor response to ensure high performance and long life of the equipment.
2. **Power management**
-**Application scenario**: Used in power switches and power management modules.
-**Example**: In the power management systems of various electronic devices, 60N03GJ-VB can provide stable power conversion and efficient power control to ensure stable operation and energy efficiency optimization of the equipment.
3. **Battery protection**
-**Application scenario**: Applicable to power switches in lithium battery protection circuits.
- **Example**: In mobile electronic devices and portable power systems, 60N03GJ-VB can be used as a key component of lithium battery protection circuits to ensure safety and efficiency during battery charging and discharging.
4. **Low-voltage DC-DC converter**
- **Application scenario**: Power switching and control for low-voltage DC-DC converters.
- **Example**: In communication equipment and industrial automation control systems, 60N03GJ-VB can provide efficient DC conversion and power management to ensure stable operation of equipment and reliability of the system.
In short, 60N03GJ-VB is a well-designed, high-performance MOSFET suitable for a variety of low-voltage, high-power applications such as motor drive, power management, battery protection, and low-voltage DC-DC converters, providing reliable power control and power conversion solutions for various electronic devices.
60N03GJ-VB is suitable for a variety of low-voltage, high-power application scenarios:
1. **Motor drive**
-**Application scenario**: Applicable to motor drive modules in power tools and electric vehicles.
-**Example**: In the motor drive system of power tools, 60N03GJ-VB can provide efficient power conversion and fast motor response to ensure high performance and long life of the equipment.
2. **Power management**
-**Application scenario**: Used in power switches and power management modules.
-**Example**: In the power management systems of various electronic devices, 60N03GJ-VB can provide stable power conversion and efficient power control to ensure stable operation and energy efficiency optimization of the equipment.
3. **Battery protection**
-**Application scenario**: Applicable to power switches in lithium battery protection circuits.
- **Example**: In mobile electronic devices and portable power systems, 60N03GJ-VB can be used as a key component of lithium battery protection circuits to ensure safety and efficiency during battery charging and discharging.
4. **Low-voltage DC-DC converter**
- **Application scenario**: Power switching and control for low-voltage DC-DC converters.
- **Example**: In communication equipment and industrial automation control systems, 60N03GJ-VB can provide efficient DC conversion and power management to ensure stable operation of equipment and reliability of the system.
In short, 60N03GJ-VB is a well-designed, high-performance MOSFET suitable for a variety of low-voltage, high-power applications such as motor drive, power management, battery protection, and low-voltage DC-DC converters, providing reliable power control and power conversion solutions for various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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