5R399P-VB TO247 Product details
Product introduction:
**Model:** 5R399P-VB TO247
**Package:** TO247
**Configuration:** Single N-channel
**VDS:** 500V
**VGS:** 30(±V)
**Vth:** 3.8V
**RDS(ON):** 80mΩ @ VGS=10V
**ID:** 40A
**Technology:** SJ_Multi-EPI
The 5R399P-VB TO247 is a high voltage single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of 30V. Its turn-on voltage (Vth) is 3.8V, on-resistance (RDS(ON)) is 80mΩ (at VGS=10V), and maximum continuous drain current (ID) is 40A. This MOSFET adopts SJ_Multi-EPI technology, which combines multiple epitaxial technologies and is suitable for applications requiring high voltage, high current and low on-resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| Parameter| Value|
|-------------------|-----------|
| Model| 5R399P-VB TO247 |
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 500V |
| Gate-source voltage (VGS) | 30 (±V) |
| Threshold voltage (Vth) | 3.8V |
| On-resistance (RDS(ON)) | 80mΩ @ VGS=10V |
| Maximum continuous drain current (ID) | 40A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
1. **Industrial Power Modules: **
5R399P-VB TO247 MOSFET is suitable for high voltage switching applications in industrial power modules. Its high current capability and low on-resistance make it suitable for power control of factory equipment and large machinery, ensuring stable operation and efficient energy conversion of equipment.
2. **EV Charging Stations: **
In the DC charging module of electric vehicle charging stations, this MOSFET can provide reliable power switching control. It can handle the high current requirements in the charging station, ensuring fast charging of electric vehicles and stability of the system.
3. **Solar Inverters: **
In solar inverters, 5R399P-VB TO247 MOSFET can handle the energy conversion from solar panels to the AC grid. Its high voltage capability and low on-resistance help improve the efficiency and performance of the inverter.
4. **High-Performance Power Modules: **
In high-performance power modules that need to handle high voltage and high current, this MOSFET can be used as a key power switch component. Its stable electrical performance and high load capacity make it suitable for power management and control in various industrial and commercial applications.
Through the above examples, 5R399P-VB TO247 MOSFET demonstrates its superior performance in high voltage, high current and low on-resistance application scenarios, suitable for key circuit design in many fields such as industrial power supply, electric vehicle charging, solar inverter and high-performance power module.
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