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5R299P-VB TO247 Product details
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5R299P-VB MOSFET Product Introduction
5R299P-VB is a single N-channel power MOSFET in TO-247 package. Manufactured by VBsemi using SJ_Multi-EPI technology, it features high current and low on-resistance, making it suitable for power electronics applications that require high power and high efficiency conversion.
5R299P-VB is a single N-channel power MOSFET in TO-247 package. Manufactured by VBsemi using SJ_Multi-EPI technology, it features high current and low on-resistance, making it suitable for power electronics applications that require high power and high efficiency conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: 5R299P-VB
- **Package**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: 5R299P-VB
- **Package**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Industrial power equipment**: 5R299P-VB is suitable for high-power inverters and frequency converters in industrial power systems. Its high current handling capability and low on-resistance can effectively improve energy conversion efficiency, making it suitable for motor drives and high-power power systems.
2. **Electric vehicle power systems**: In the motor drive systems of electric and hybrid vehicles, this MOSFET can provide efficient power switch control to help improve the vehicle's power performance and range.
3. **Solar inverter**: Used in inverter circuits in solar photovoltaic systems, 5R299P-VB can effectively convert DC power generated by solar panels into AC power for grid use or independent power generation systems.
4. **High-performance server power**: In data centers and high-performance computer systems, this MOSFET can be used as a high-efficiency power switching element to help provide stable power supply and energy efficiency optimization.
5. **Industrial high-frequency power supply**: In industrial equipment that requires high-frequency and high-efficiency power conversion, 5R299P-VB can effectively control the conversion and distribution of electric energy, such as high-frequency inverters, industrial electric furnaces, etc.
In summary, 5R299P-VB MOSFET, with its high current carrying capacity, low on-resistance and stable performance characteristics, has shown a wide range of application potential in a variety of high-power and high-efficiency electronic devices, and is an ideal choice for designing high-performance power electronic systems.
1. **Industrial power equipment**: 5R299P-VB is suitable for high-power inverters and frequency converters in industrial power systems. Its high current handling capability and low on-resistance can effectively improve energy conversion efficiency, making it suitable for motor drives and high-power power systems.
2. **Electric vehicle power systems**: In the motor drive systems of electric and hybrid vehicles, this MOSFET can provide efficient power switch control to help improve the vehicle's power performance and range.
3. **Solar inverter**: Used in inverter circuits in solar photovoltaic systems, 5R299P-VB can effectively convert DC power generated by solar panels into AC power for grid use or independent power generation systems.
4. **High-performance server power**: In data centers and high-performance computer systems, this MOSFET can be used as a high-efficiency power switching element to help provide stable power supply and energy efficiency optimization.
5. **Industrial high-frequency power supply**: In industrial equipment that requires high-frequency and high-efficiency power conversion, 5R299P-VB can effectively control the conversion and distribution of electric energy, such as high-frequency inverters, industrial electric furnaces, etc.
In summary, 5R299P-VB MOSFET, with its high current carrying capacity, low on-resistance and stable performance characteristics, has shown a wide range of application potential in a variety of high-power and high-efficiency electronic devices, and is an ideal choice for designing high-performance power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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